This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.Fuhrmann, JürgenDoan, Duy HaiGlitzky, AnnegretLiero, MatthiasNika, Grigor2022-06-232022-06-232019https://oa.tib.eu/renate/handle/123456789/9244https://doi.org/10.34657/8282We discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss--Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.eng510Non-isothermal drift-diffusionorganic semiconductorsfinite volumesgeneralized Scharfetter--Gummel schemepath followingReport6 S.