CC BY 4.0 UnportedMa, DingyuRong, XinZheng, XiantongWang, WeiyingWang, PingSchulz, TobiasAlbrecht, MartinMetzner, SebastianMüller, MathiasAugust, OlgaBertram, FrankChristen, JürgenJin, PengLi, MoZhang, JianYang, XuelinXu, FujunQin, ZhixinGe, WeikunShen, BoWang, Xinqiang2023-03-062023-03-062017https://oa.tib.eu/renate/handle/123456789/11692http://dx.doi.org/10.34657/10725We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) Inx Ga1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.enghttps://creativecommons.org/licenses/by/4.0500600chemical bindingexcitationhigh temperaturephotoluminescenceArticle