This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.Radziunas, MindaugasBotey, MurielHerrero, RamonStaliunas, Kestutis2016-03-242019-06-2820130946-8633https://doi.org/10.34657/2041https://oa.tib.eu/renate/handle/123456789/1855We investigate beam shaping in broad area semiconductor amplifiers induced by a periodic modulation of the pump on a scale of several microns. The study is performed by solving numerically a (2+1)-dimensional model for the semiconductor amplifier. We show that, under realistic conditions, the anisotropic gain induced by the pump periodicity can show narrow angular profile of enhanced gain of less than one degree, providing an intrinsic filtering mechanism and eventually improving the spatial beam quality.application/pdfeng510Broad area semiconductor amplifierperiodic modulationspatial modulationangular filteringbeam shapingfar fieldquality improvementtraveling wave modelBeam shaping mechanism in spatially modulated edge emitting broad area semiconductor amplifiersReport