Statistics for High-Performance of InGaZnO TFTs With an Ultrathin 5-nm AlO Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

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High-Performance of InGaZnO TFTs With an Ultrathin 5-nm AlO Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method 1

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High-Performance_of_InGaZnO_TFTs_With_an_Ultrathin.pdf 3