Browsing by Author "Bimberg, Dieter"
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- ItemBroadening of mode-locking pulses in quantum-dot semiconductor lasers : simulation, analysis and experiments(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Radziunas, Mindaugas; Vladimirov, Andrei G.; Viktorov, Evgeny A.; Fiol, Gerrit; Schmeckebier, Holger; Bimberg, DieterWe consider a mode-locked quantum-dot edge-emitting semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model taking into account carrier exchange processes between a reservoir and the quantum dots. A comprehensive parameter study is presented and an analysis of mode-locking pulse broadening with an increase of injection current is performed. The results of our theoretical analysis are supported by experimental data demonstrating a strong pulse asymmetry in a monolithic two section quantum dot mode-locked laser
- ItemDynamical regimes in a monolithic passively mode-locked quantum dot laser(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Vladimirov, Andrei; Bandelow, Uwe; Fiol, Gerrit; Arsenijevi´c, Dejan; Kleinert, Moritz; Bimberg, Dieter; Pimenov, Alexander; Rachinskii, DmitriiOperation regimes of a two section monolithic quantum dot (QD) mode-locked laser are studied experimentally and theoretically, using a model that takes into account carrier exchange between QD ground state and 2D reservoir of a QD-in-a-well structure, and experimentally. It is shown analytically and numerically that, when the absorber section is long enough, the laser exhibits bistability between laser off state and different mode-locking regimes. The Q-switching instability leading to slow modulation of the mode-locked pulse peak intensity is completely eliminated in this case. When, on the contrary, the absorber length is rather short, in addition to usual Q-switched mode-locking, pure Q-switching regimes are predicted theoretically and observed experimentally.
- ItemHybrid mode-locking in edge-emitting semiconductor lasers: Simulations, analysis and experiments(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2012) Arkhipov, Rostislav; Pimenov, Alexander; Radziunas, Mindaugas; Vladimirov, Andrei G.; Arsenjevi´c, Dejan; Rachinskii, Dmitrii; Schmeckebier, Holger; Bimberg, DieterHybrid mode-locking in a two section edge-emitting semiconductor laser is studied numerically and analytically using a set of three delay differential equations. In this set the external RF signal applied to the saturable absorber section is modeled by modulation of the carrier relaxation rate in this section. Estimation of the locking range where the pulse repetition frequency is synchronized with the frequency of the external modulation is performed numerically and the effect of the modulation shape and amplitude on this range is investigated. Asymptotic analysis of the dependence of the locking range width on the laser parameters is carried out in the limit of small signal modulation. Our numerical simulations indicate that hybrid mode-locking can be also achieved in the cases when the frequency of the external modulation is approximately twice larger and twice smaller than the pulse repetition frequency of the free running passively mode-locked laser fP . Finally, we provide an experimental demonstration of hybrid mode-locking in a 20 GHz quantum-dot laser with the modulation frequency of the reverse bias applied to the absorber section close to fP / 2.
- ItemImpact of size, shape and composition on piezoelectric effects and the electronic properties of InGaAs/GaAs quantum dots(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2007) Schliwa, Andrei; Winkelnkemper, Momme; Bimberg, DieterThe strain fields in and around self-organized In(Ga)As/GaAs quantum dots (QD) sensitively depend on QD geometry, average InGaAs composition and the In/Ga distribution profile. Piezoelectric fields of varying size are one result of these strain fields. We study systematically a large variety of realistic QD geometries and composition profiles, and calculate the linear and quadratic parts of the piezoelectric field. The balance of the two orders depends strongly on the QD shape and composition. For pyramidal InAs QDs with sharp interfaces a strong dominance of the second order fields is found. Upon annealing the first order terms become dominant, resulting in a reordering of the electron p- and d-states and a reorientation of the hole wavefunctions.