Browsing by Author "Glitzky, Annegret"
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- Item3D electrothermal simulations of organic LEDs showing negative differential resistance(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Koprucki, Thomas; Fischer, Axel; Reineke, SebastianOrganic semiconductor devices show a pronounced interplay between temperature-activated conductivity and self-heating which in particular causes inhomogeneities in the brightness of large-area OLEDs at high power. We consider a 3D thermistor model based on partial differential equations for the electrothermal behavior of organic devices and introduce an extension to multiple layers with nonlinear conductivity laws, which also take the diode-like behavior in recombination zones into account. We present a numerical simulation study for a red OLED using a finite-volume approximation of this model. The appearance of S-shaped current-voltage characteristics with regions of negative differential resistance in a measured device can be quantitatively reproduced. Furthermore, this simulation study reveals a propagation of spatial zones of negative differential resistance in the electron and hole transport layers toward the contact.
- ItemAnalysis of a hybrid model for the electrothermal behavior of semiconductor heterostructures(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe prove existence of a weak solution for a hybrid model for the electro-thermal behavior of semiconductor heterostructures. This hybrid model combines an electro-thermal model based on drift-diffusion with thermistor type models in different subregions of the semiconductor heterostructure. The proof uses a regularization method and Schauder's fixed point theorem. For boundary data compatible with thermodynamic equilibrium we verify, additionally, uniqueness. Moreover, we derive bounds and higher integrability properties for the electrostatic potential and the quasi Fermi potentials as well as the temperature.
- ItemAnalysis of a spin-polarized drift-diffusion model(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2008) Glitzky, AnnegretWe introduce a spin-polarized drift-diffusion model for semiconductor spintronic devices. This coupled system of continuity equations and a Poisson equation with mixed boundary conditions in all equations has to be considered in heterostructures. We give a weak formulation of this problem and prove an existence and uniqueness result for the instationary problem. If the boundary data is compatible with thermodynamic equilibrium the free energy along the solution decays monotonously and exponentially to its equilibrium value. In other cases it may be increasing but we estimate its growth. Moreover we give upper and lower estimates for the solution.
- ItemAnalysis of electronic models for solar cells including energy resolved defect densities(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Glitzky, AnnegretWe introduce an electronic model for solar cells including energy resolved defect densities. The resulting drift-diffusion model corresponds to a generalized van Roosbroeck system with additional source terms coupled with ODEs containing space and energy as parameters for all defect densities. The system has to be considered in heterostructures and with mixed boundary conditions from device simulation. We give a weak formulation of the problem. If the boundary data and the sources are compatible with thermodynamic equilibrium the free energy along solutions decays monotonously. In other cases it may be increasing, but we estimate its growth. We establish boundedness and uniqueness results and prove the existence of a weak solution. This is done by considering a regularized problem, showing its solvability and the boundedness of its solutions independent of the regularization level.
- ItemAnalysis of p(x)-Laplace thermistor models describing the electrothermal behavior of organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Glitzky, Annegret; Liero, MatthiasWe study a stationary thermistor model describing the electrothermal behavior of organic semiconductor devices featuring non-Ohmic current-voltage laws and selfheating effects. The coupled system consists of the current-flow equation for the electrostatic potential and the heat equation with Joule heating term as source. The self-heating in the device is modeled by an Arrhenius-like temperature dependency of the electrical conductivity. Moreover, the non-Ohmic electrical behavior is modeled by a power law such that the electrical conductivity depends nonlinearly on the electric field. Notably, we allow for functional substructures with different power laws, which gives rise to a p(x)-Laplace-type problem with piecewise constant exponent. We prove the existence and boundedness of solutions in the two-dimensional case. The crucial point is to establish the higher integrability of the gradient of the electrostatic potential to tackle the Joule heating term. The proof of the improved regularity is based on Caccioppoli-type estimates, Poincaré inequalities, and a Gehring-type Lemma for the p(x)-Laplacian. Finally, Schauders fixed-point theorem is used to show the existence of solutions.
- ItemA coarse-grained electrothermal model for organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2021) Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe derive a coarse-grained model for the electrothermal interaction of organic semiconductors. The model combines stationary drift-diffusion based electrothermal models with thermistor type models on subregions of the device and suitable transmission conditions. Moreover, we prove existence of a solution using a regularization argument and Schauder's fixed point theorem. In doing so, we extend recent work by taking into account the statistical relation given by the Gauss--Fermi integral and mobility functions depending on the temperature, charge-carrier density, and field strength, which is required for a proper description of organic devices.
- ItemA coarse‐grained electrothermal model for organic semiconductor devices(Chichester, West Sussex : Wiley, 2022) Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe derive a coarse-grained model for the electrothermal interaction of organic semiconductors. The model combines stationary drift-diffusion- based electrothermal models with thermistor-type models on subregions of the device and suitable transmission conditions. Moreover, we prove existence of a solution using a regularization argument and Schauder's fixed point theorem. In doing so, we extend recent work by taking into account the statistical relation given by the Gauss–Fermi integral and mobility functions depending on the temperature, charge-carrier density, and field strength, which is required for a proper description of organic devices.
- ItemConvergence of an implicit Voronoi finite volume method for reaction-diffusion problems(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Fiebach, André; Glitzky, Annegret; Linke, AlexanderWe investigate the convergence of an implicit Voronoi finite volume method for reaction- diffusion problems including nonlinear diffusion in two space dimensions. The model allows to handle heterogeneous materials and uses the chemical potentials of the involved species as primary variables. The numerical scheme uses boundary conforming Delaunay meshes and preserves positivity and the dissipative property of the continuous system. Starting from a result on the global stability of the scheme (uniform, mesh-independent global upper and lower bounds), we prove strong convergence of the chemical activities and their gradients to a weak solution of the continuous problem. In order to illustrate the preservation of qualitative properties by the numerical scheme, we present a long-term simulation of the Michaelis-Menten-Henri system. Especially, we investigate the decay properties of the relative free energy and the evolution of the dissipation rate over several magnitudes of time, and obtain experimental orders of convergence for these quantities.
- ItemDimension reduction of thermistor models for large-area organic light-emitting diodes(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Glitzky, Annegret; Liero, Matthias; Nika, GrigorAn effective system of partial differential equations describing the heat and current flow through a thin organic light-emitting diode (OLED) mounted on a glass substrate is rigorously derived from a recently introduced fully three-dimensional φ(x)-Laplace thermistor model. The OLED consists of several thin layers that scale differently with respect to the multiscale parameter ε > 0 which is the ratio between the total thickness and the lateral extent of the OLED. Starting point of the derivation is a rescaled formulation of the current-flow equation in the OLED for the driving potential and the heat equation in OLED and glass substrate with Joule heat term concentrated in the OLED. Assuming physically motivated scalings in the electrical flux functions, uniform a priori bounds are derived for the solutions of the three-dimensional system which facilitates the extraction of converging subsequences with limits that are identified as solutions of a dimension reduced system. In the latter, the effective current-flow equation is given by two semilinear equations in the two-dimensional cross-sections of the electrodes and algebraic equations for the continuity of the electrical fluxes through the organic layers. The effective heat equation is formulated only in the glass substrate with Joule heat term on the part of the boundary where the OLED is mounted.
- ItemDiscrete Sobolev-Poincare inequalities for Voronoi finite volume approximations(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2009) Glitzky, Annegret; Griepentrog, Jens AndréWe prove a discrete Sobolev-Poincare inequality for functions with arbitrary boundary values on Voronoi finite volume meshes. We use Sobolev's integral representation and estimate weakly singular integrals in the context of finite volumes. We establish the result for star shaped polyhedral domains and generalize it to the finite union of overlapping star shaped domains. In the appendix we prove a discrete Poincare inequality for space dimensions greater or equal to two.
- ItemDrift-diffusion modeling, analysis and simulation of organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Doan, Duy-Hai; Glitzky, Annegret; Liero, MatthiasWe discuss drift-diffusion models for charge-carrier transport in organic semiconductor devices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The former leads to so-called Gauss-Fermi statistics, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlinear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauders fixed-point theorem. Finally, we discuss the numerical discretization of the model using finite-volume methods and a generalized Scharfetter-Gummel scheme for the Gauss-Fermi statistics.
- ItemDrift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Doan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.
- ItemDrift–diffusion simulation of S-shaped current–voltage relations for organic semiconductor devices(Dordrecht : Springer Science + Business Media B.V., 2020) Doan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe present an electrothermal drift–diffusion model for organic semiconductor devices with Gauss–Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature-dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter–Gummel scheme. Using path-following techniques, we demonstrate that the model exhibits S-shaped current–voltage curves with regions of negative differential resistance, which were only recently observed experimentally. © 2020, The Author(s).
- ItemAn effective bulk-surface thermistor model for large-area organic light-emitting diodes(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Glitzky, Annegret; Liero, Matthias; Nika, GrigorThe existence of a weak solution for an effective system of partial differential equations describing the electrothermal behavior of large-area organic light-emitting diodes (OLEDs) is proved. The effective system consists of the heat equation in the three-dimensional bulk glass substrate and two semi-linear equations for the current flow through the electrodes coupled to algebraic equations for the continuity of the electrical fluxes through the organic layers. The electrical problem is formulated on the (curvilinear) surface of the glass substrate where the OLED is mounted. The source terms in the heat equation are due to Joule heating and are hence concentrated on the part of the boundary where the current-flow equation is posed. The existence of weak solutions to the effective system is proved via Schauder's fixed-point theorem. Moreover, since the heat sources are a priori only in $L^1$, the concept of entropy solutions is used.
- ItemElectro-reaction-diffusion systems in heterostructures(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2000) Glitzky, Annegret; Hünlich, RolfThe paper is devoted to the mathematical investigation of a general class of electro-reaction-diffusion systems with nonsmooth data which arises in applications to semiconductor technology. Besides of a basic problem, a reduced problem is considered which is obtained if the kinetics of the free carriers is fast. For two dimensional domains we prove a global existence and uniqueness result. In addition, asymptotic properties of solutions are studied. Basic ideas are energy estimates, Moser iteration, regularization techniques and an existence result for electro-diffusion systems with weakly nonlinear volume and boundary source terms which is proved in the paper, too. The relationship between the property that the energy functional decays exponentially in time to its equilibrium value and the existence of global positive lower bounds for the densities of the species is investigated. We illustrate relations between the model and its reduced version in general and for concrete examples. Finally, we discuss the special features of heterostructures for simplified model problems.
- ItemAn electronic model for solar cells including active interfaces and energy resolved defect densities(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2011) Glitzky, AnnegretWe introduce an electronic model for solar cells taking into account heterostructures with active interfaces and energy resolved volume and interface trap densities. The model consists of continuity equations for electrons and holes with thermionic emission transfer conditions at the interface and of ODEs for the trap densities with energy level and spatial position as parameters, where the right hand sides contain generation-recombination as well as ionization reactions. This system is coupled with a Poisson equation for the electrostatic potential. We show the thermodynamic correctness of the model and prove a priori estimates for the solutions to the evolution system. Moreover, existence and uniqueness of weak solutions of the problem are proven. For this purpose we solve a regularized problem and verify bounds of the corresponding solution not depending on the regularization level.
- ItemElectrothermal Tristability Causes Sudden Burn-In Phenomena in Organic LEDs(Weinheim : Wiley-VCH, 2021) Kirch, Anton; Fischer, Axel; Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Reineke, SebastianOrganic light-emitting diodes (OLEDs) have been established as a mature display pixel technology. While introducing the same technology in a large-area form factor to general lighting and signage applications, some key questions remain unanswered. Under high-brightness conditions, OLED panels were reported to exhibit nonlinear electrothermal behavior causing lateral brightness inhomogeneities and even regions of switched-back luminance. Also, the physical understanding of sudden device failure and burn-ins is still rudimentary. A safe and stable operation of lighting tiles, therefore, requires an in-depth understanding of these physical phenomena. Here, it is shown that the electrothermal treatment of thin-film devices allows grasping the underlying physics. Configurations of OLEDs with different lateral dimensions are studied as a role model and it is reported that devices exceeding a certain panel size develop three stable, self heating-induced operating branches. Switching between them causes the sudden formation of dark spots in devices without any preexisting inhomogeneities. A current-stabilized operation mode is commonly used in the lighting industry, as it ensures degradation-induced voltage adjustments. Here, it is demonstrated that a tristable operation always leads to destructive switching, independent of applying constant currents or voltages. With this new understanding of the effects at high operation brightness, it will be possible to adjust driving schemes accordingly, design more resilient system integrations, and develop additional failure mitigation strategies. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH
- ItemEnergy estimates for continuous and discretized electro-reaction-diffusion systems(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2007) Glitzky, Annegret; Gärtner, KlausWe consider electro-reaction-diffusion systems consisting of continuity equations for a finite number of species coupled with a Poisson equation. We take into account heterostructures, anisotropic materials and rather general statistic relations. We investigate thermodynamic equilibria and prove for solutions to the evolution system the monotone and exponential decay of the free energy to its equilibrium value. Here the essential idea is an estimate of the free energy by the dissipation rate which is proved indirectly. The same properties are shown for an implicit time discretized version of the problem. Moreover, we provide a space discretized scheme for the electro-reaction-diffusion system which is dissipative (the free energy decays monotonously). On a fixed grid we use for each species different Voronoi boxes which are defined with respect to the anisotropy matrix occurring in the flux term of this species.
- ItemEnergy estimates for electro-reaction-diffusion systems with partly fast kinetics(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2006) Glitzky, AnnegretWe start from a basic model for the transport of charged species in heterostructures containing the mechanisms diffusion, drift and reactions in the domain and at its boundary. Considering limit cases of partly fast kinetics we derive reduced models. This reduction can be interpreted as some kind of projection scheme for the weak formulation of the basic electro--reaction--diffusion system. We verify assertions concerning invariants and steady states and prove the monotone and exponential decay of the free energy along solutions to the reduced problem and to its fully implicit discrete-time version by means of the results of the basic problem. Moreover we make a comparison of prolongated quantities with the solutions to the basic model.
- ItemExistence of bounded steady state solutions to spin-polarized drift-diffusion systems(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2008) Glitzky, Annegret; Gärtner, KlausWe study a stationary spin-polarized drift-diffusion model for semiconductor spintronic devices. This coupled system of continuity equations and a Poisson equation with mixed boundary conditions in all equations has to be considered in heterostructures. In 3D we prove the existence and boundedness of steady states. If the Dirichlet conditions are compatible or nearly compatible with thermodynamic equilibrium the solution is unique. The same properties are obtained for a space discretized version of the problem: Using a Scharfetter-Gummel scheme on 3D boundary conforming Delaunay grids we show existence, boundedness and, for small applied voltages, the uniqueness of the discrete solution.
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