Browsing by Author Fuhrmann, Jürgen

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Issue DateTitleAuthor(s)
20173D electrothermal simulations of organic LEDs showing negative differential resistanceLiero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Koprucki, Thomas; Fischer, Axel; Reineke, Sebastian
2020Assessing the quality of the excess chemical potential flux scheme for degenerate semiconductor device simulationAbdel, Dilara; Farrell, Patricio; Fuhrmann, Jürgen
2011An assessment of discretizations for convection-dominated convection-diffusion equationsAugustin, Matthias; Caiazzo, Alfonso; Fiebach, André; Fuhrmann, Jürgen; John, Volker; Linke, Alexander; Umla, Rudolf
2014Comparison and numerical treatment of generalised Nernst-Planck modelsFuhrmann, Jürgen
2017Comparison of thermodynamically consistent charge carrier flux discretizations for Fermi-Dirac and Gauss-Fermi statisticsFarrell, Patricio; Patriarca, Matteo; Fuhrmann, Jürgen; Koprucki, Thomas
2016Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statisticsFarrell, Patricio; Koprucki, Thomas; Fuhrmann, Jürgen
2019A continuum model for yttria-stabilised zirconia incorporating triple phase boundary, lattice structure and immobile oxide ionsVágner, Petr; Guhlke, Clemens; Miloš, Vojtěch; Müller, Rüdiger; Fuhrmann, Jürgen
2019A continuum model for yttria-stabilized zirconia incorporating triple phase boundary, lattice structure and immobile oxide ionsVágner, Petr; Guhlke, Clemens; Miloš, Vojtěch; Müller, Rüdiger; Fuhrmann, Jürgen
2007Convergence of a finite volume scheme to the eigenvalues of a Schrödinger operatorKoprucki, Thomas; Eymard, Robert; Fuhrmann, Jürgen
2019Drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devicesDoan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, Matthias
2020Drift–diffusion simulation of S-shaped current–voltage relations for organic semiconductor devicesDoan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, Matthias
2018Efficient coupling of electro-optical and heat-transport models for broad-area semiconductor lasersRadziunas, Mindaugas; Fuhrmann, Jürgen; Zeghuzi, Anissa; Wünsche, Hans-Jürgen; Koprucki, Thomas; Brée, Carsten; Wenzel, Hans; Bandelow, Uwe
2017Efficient coupling of inhomogeneous current spreading and dynamic electro-optical models for broad-area edge-emitting semiconductor devicesRadziunas, Mindaugas; Zeghuzi, Anissa; Fuhrmann, Jürgen; Koprucki, Thomas; Wünsche, Hans-Jürgen; Wenzel, Hans; Bandelow, Uwe
2006Electronic states in semiconductor nanostructures and upscaling to semi-classical modelsKoprucki, Thomas; Kaiser, Hans-Christoph; Fuhrmann, Jürgen
2021Electrothermal Tristability Causes Sudden Burn-In Phenomena in Organic LEDsKirch, Anton; Fischer, Axel; Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Reineke, Sebastian
2021Entropy and convergence analysis for two finite volume schemes for a Nernst--Planck--Poisson system with ion volume constraintsGaudeul, Benoît; Fuhrmann, Jürgen
2022Entropy and convergence analysis for two finite volume schemes for a Nernst–Planck–Poisson system with ion volume constraintsGaudeul, Benoît; Fuhrmann, Jürgen
2008Experimental and numerical model study of the limiting current in a channel flow cell with a cirvular electrodeFuhrmann, Jürgen; Zhao, H.; Holzbecher, E.; Langmach, H.; Chojak, M.; Halseid, R.; Jusys, Z.; Behm, R.J.
2020Experimental proof of Joule heating-induced switched-back regions in OLEDsKirch, Anton; Fische, Axel; Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Reineke, Sebastian
2020Generalized Poisson--Nernst--Planck-based physical model of O$_2$ I LSM I YSZ electrodeMiloš, Vojtěch; Vágner, Petr; Budáč, Daniel; Carda, Michal; Paidar, Martin; Fuhrmann, Jürgen; Bouzek, Karel
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