| Issue Date | Title | Author(s) |
| 2019 | Axial GaAs/Ga(As, Bi) nanowire heterostructures | Oliva, Miriam; Gao, Guanhui; Luna, Esperanza; Geelhaar, Lutz; Lewis, Ryan B |
| 2020 | Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments | Al Hassan, Ali; Lähnemann, Jonas; Davtyan, Arman; Al-Humaidi, Mahmoud; Herranz, Jesús; Bahrami, Danial; Anjum, Taseer; Bertram, Florian; Dey, Arka Bikash; Geelhaar, Lutz; Pietsch, Ullrich |
| 2019 | Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble | van Treeck, David; Ledig, Johannes; Scholz, Gregor; Lähnemann, Jonas; Musolino, Mattia; Tahraoui, Abbes; Brandt, Oliver; Waag, Andreas; Riechert, Henning; Geelhaar, Lutz |
| 2018 | Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire | Senichev, Alexander; Corfdir, Pierre; Brandt, Oliver; Ramsteiner, Manfred; Breuer, Steffen; Schilling, Jörg; Geelhaar, Lutz; Werner, Peter |
| 2022 | Exploiting flux shadowing for strain and bending engineering in core-shell nanowires | Al Humaidi, Mahmoud; Jakob, Julian; Al Hassan, Ali; Davtyan, Arman; Schroth, Philipp; Feigl, Ludwig; Herranz, Jesús; Novikov, Dmitri; Geelhaar, Lutz; Baumbach, Tilo; Pietsch, Ullrich |
| 2021 | Impact of Electrical Current on Single GaAs Nanowire Structure | Bahrami, Danial; AlHassan, Ali; Davtyan, Arman; Zhe, Ren; Anjum, Taseer; Herranz, Jesús; Geelhaar, Lutz; Novikov, Dmitri V.; Timm, Rainer; Pietsch, Ullrich |
| 2012 | Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy | Davydok, Anton; Breuer, Steffen; Biermanns, Andreas; Geelhaar, Lutz; Pietsch, Ullrich |
| 2016 | Light coupling between vertical III-As nanowires and planar Si photonic waveguides for the monolithic integration of active optoelectronic devices on a Si platform | Giuntoni, Ivano; Geelhaar, Lutz; Bruns, Jürgen; Riechert, Henning |
| 2012 | Polarized recombination of acoustically transported carriers in GaAs nanowires | Möller, Michael; Hernández-Mínguez, Alberto; Breuer, Steffen; Pfüller, Carsten; Brandt, Oliver; de Lima Jr, Mauricio M.; Cantarero, Andrés; Geelhaar, Lutz; Riechert, Henning; Santos, Paulo V. |
| 2020 | Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers | Kamimura, Jumpei; Budde, Melanie; Bogdanoff, Peter; Tschammer, Carsten; Abdi, Fatwa F.; van de Krol, Roel; Bierwagen, Oliver; Riechert, Henning; Geelhaar, Lutz |
| 2020 | Self-Assembly of Well-Separated AlN Nanowires Directly on Sputtered Metallic TiN Films | Azadmand, Mani; Auzelle, Thomas; Lähnemann, Jonas; Gao, Guanhui; Nicolai, Lars; Ramsteiner, Manfred; Trampert, Achim; Sanguinetti, Stefano; Brandt, Oliver; Geelhaar, Lutz |
| 2017 | Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging | Davtyan, Arman; Krause, Thilo; Kriegner, Dominik; Al-Hassan, Ali; Bahrami, Danial; Mostafavi Kashani, Seyed Mohammad; Lewis, Ryan B.; Küpers, Hanno; Tahraoui, Abbes; Geelhaar, Lutz; Hanke, Michael; Leake, Steven John; Loffeld, Otmar; Pietsch, Ullrich |
| 2020 | X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires | Davtyan, Arman; Kriegner, Dominik; Holý, Václav; AlHassan, Ali; Lewis, Ryan B.; McDermott, Spencer; Geelhaar, Lutz; Bahrami, Danial; Anjum, Taseer; Ren, Zhe; Richter, Carsten; Novikov, Dmitri; Müller, Julian; Butz, Benjamin; Pietsch, Ullrich |
