Freestanding Nanolayers of a Wide-Gap Topological Insulator through Liquid-Phase Exfoliation

dc.bibliographicCitation.firstPage794eng
dc.bibliographicCitation.issue2eng
dc.bibliographicCitation.lastPage801eng
dc.bibliographicCitation.volume27eng
dc.contributor.authorLê Anh, Mai
dc.contributor.authorPotapov, Pavel
dc.contributor.authorWolf, Daniel
dc.contributor.authorLubk, Axel
dc.contributor.authorGlatz, Bernhard
dc.contributor.authorFery, Andreas
dc.contributor.authorDoert, Thomas
dc.contributor.authorRuck, Michael
dc.date.accessioned2022-05-05T05:34:24Z
dc.date.available2022-05-05T05:34:24Z
dc.date.issued2021
dc.description.abstractThe layered salt Bi14Rh3I9 is a weak three-dimensional (3D) topological insulator (TI), that is, a stack of two-dimensional (2D) TIs. It has a wide non-trivial band gap of 210 meV, which is generated by strong spin-orbit coupling, and possesses protected electronic edge-states. In the structure, charged layers of (Formula presented.) (Bi4Rh)3I]2+ honeycombs and (Formula presented.) Bi2I8]2− chains alternate. The non-trivial topology of Bi14Rh3I9 is an inherent property of the 2D intermetallic fragment. Here, the exfoliation of Bi14Rh3I9 was performed using two different chemical approaches: (a) through a reaction with n-butyllithium and poly(vinylpyrrolidone), (b) through a reaction with betaine in dimethylformamide at 55 °C. The former yielded few-layer sheets of the new compound Bi12Rh3I, while the latter led to crystalline sheets of Bi14Rh3I9 with a thickness down to 5 nm and edge-lengths up to several ten microns. X-ray diffraction and electron microscopy proved that the structure of Bi14Rh3I9 remained intact. Thus, it was assumed that the particles are still TIs. Dispersions of these flakes now allow for next steps towards the envisioned applications in nanoelectronics, such as the study of quantum coherence in deposited films, the combination with superconducting particles or films for the generation of Majorana fermions, or studies on their behavior under the influence of magnetic or electric fields or in contact with various materials occurring in devices. The method presented generally allows to exfoliate layers with high specific charges and thus the use of layered starting materials beyond van der Waals crystals. © 2020 The Authors. Chemistry - A European Journal published by Wiley-VCH GmbHeng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/8856
dc.identifier.urihttps://doi.org/10.34657/7894
dc.language.isoengeng
dc.publisherWeinheim : Wiley-VCHeng
dc.relation.doihttps://doi.org/10.1002/chem.202004320
dc.relation.ispartofseriesChemistry - A European Journal 27 (2021), Nr. 2eng
dc.relation.issn1521-3765
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject2D materialseng
dc.subjectdelaminationeng
dc.subjectexfoliationeng
dc.subjecttopochemistryeng
dc.subjecttopological insulatorseng
dc.subject.ddc540eng
dc.subject.ddc660eng
dc.titleFreestanding Nanolayers of a Wide-Gap Topological Insulator through Liquid-Phase Exfoliationeng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleChemistry - A European Journaleng
tib.accessRightsopenAccesseng
wgl.contributorIFWDeng
wgl.contributorIPFeng
wgl.subjectChemieeng
wgl.typeZeitschriftenartikeleng
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