Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
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Date
2012
Volume
7
Issue
Journal
Series Titel
Book Title
Publisher
New York, NY [u.a.] : Springer
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Abstract
In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands.
Description
Keywords
Composition, Nanotechnology, Raman, Raman efficiency, SiGe, Structural characterization, Chemical analysis, Efficiency, Nanostructures, Nanotechnology, Composition distributions, Experimental procedure, Raman, Raman efficiency, Scattering efficiency, Self-assembled islands, SiGe, Structural characterization, Si-Ge alloys
Citation
Picco, A., Bonera, E., Pezzoli, F., Grilli, E., Schmidt, O. G., Isa, F., et al. (2012). Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy. 7. https://doi.org//10.1186/1556-276X-7-633
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License
CC BY 2.0 Unported