Bifurcations in a model of monolithic passively mode-locked semiconductior laser

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Date
2008
Volume
1334
Issue
Journal
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Publisher
Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik
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Abstract

Bifurcation mechanisms of the development and break up of different operation regimes in a passively mode-locked monolithic semiconductor laser are studied by solving numerically partial differential equations for amplitudes of two counterpropagating waves and carrier densities in gain and absorber sections. It is shown that harmonic mode-locking regime with two pulses in the cavity can exhibit a period-doubling bifurcation leading to different amplitudes and separations of the pulses. The effect of linewidth enhancement factors in gain and absorber sections on the laser dynamics is discussed.

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Keywords
Semiconductor laser, bifurcations, mode-locking
Citation
Vladimirov, A., Pimenov, A., & Rachinskii, D. (2008). Bifurcations in a model of monolithic passively mode-locked semiconductior laser (Vol. 1334). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik.
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