1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis
dc.bibliographicCitation.firstPage | 2101086 | eng |
dc.bibliographicCitation.issue | 27 | eng |
dc.bibliographicCitation.journalTitle | Advanced Functional Materials | eng |
dc.bibliographicCitation.volume | 31 | eng |
dc.contributor.author | Najafidehaghani, Emad | |
dc.contributor.author | Gan, Ziyang | |
dc.contributor.author | George, Antony | |
dc.contributor.author | Lehnert, Tibor | |
dc.contributor.author | Ngo, Gia Quyet | |
dc.contributor.author | Neumann, Christof | |
dc.contributor.author | Bucher, Tobias | |
dc.contributor.author | Staude, Isabelle | |
dc.contributor.author | Kaiser, David | |
dc.contributor.author | Vogl, Tobias | |
dc.contributor.author | Hübner, Uwe | |
dc.contributor.author | Kaiser, Ute | |
dc.contributor.author | Eilenberger, Falk | |
dc.contributor.author | Turchanin, Andrey | |
dc.date.accessioned | 2021-11-25T10:32:29Z | |
dc.date.available | 2021-11-25T10:32:29Z | |
dc.date.issued | 2021 | |
dc.description.abstract | Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in-plane p–n junctions for sub-nanometer thin low-power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p–n junction devices fabricated using a scalable one-pot chemical vapor deposition process yielding MoSe2-WSe2 lateral heterostructures are reported here. The growth of the monolayer lateral heterostructures is achieved by in situ controlling the partial pressures of the oxide precursors by a two-step heating protocol. The grown lateral heterostructures are characterized structurally and optically using optical microscopy, Raman spectroscopy/microscopy, and photoluminescence spectroscopy/microscopy. High-resolution transmission electron microscopy further confirms the high-quality 1D boundary between MoSe2 and WSe2 in the lateral heterostructure. p–n junction devices are fabricated from these lateral heterostructures and their applicability as rectifiers, solar cells, self-powered photovoltaic photodetectors, ambipolar transistors, and electroluminescent light emitters are demonstrated. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/7482 | |
dc.identifier.uri | https://doi.org/10.34657/6529 | |
dc.language.iso | eng | eng |
dc.publisher | Weinheim : Wiley-VCH | eng |
dc.relation.doi | https://doi.org/10.1002/adfm.202101086 | |
dc.relation.essn | 1099-0712 | |
dc.relation.essn | 1616-3028 | |
dc.rights.license | CC BY-NC-ND 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/4.0/ | eng |
dc.subject.ddc | 620 | eng |
dc.subject.ddc | 540 | eng |
dc.subject.ddc | 530 | eng |
dc.subject.other | 2D devices | eng |
dc.subject.other | lateral heterostructures | eng |
dc.subject.other | light-emitting diode | eng |
dc.subject.other | p–n junction | eng |
dc.subject.other | transition metal dichalcogenides monolayers | eng |
dc.title | 1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IPHT | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |
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