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search.filters.applied.f.access: openAccess × Author: Büchner, Bernd × End date: 2024 × Start date: 2020 × Start date: 2020 × DDC: 621,3 ×

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    Tuning Magnetic and Transport Properties in Quasi-2D (Mn1−xNix)2P2S6 Single Crystals
    (Basel : MDPI, 2021) Shemerliuk, Yuliia; Zhou, Yonghui; Yang, Zhaorong; Cao, Gang; Wolter, Anja U.; Büchner, Bernd; Aswartham, Saicharan
    We report an optimized chemical vapor transport method to grow single crystals of (Mn1−xNix)2P2S6 where x = 0, 0.3, 0.5, 0.7, and 1. Single crystals up to 4 mm × 3 mm × 200 μm were obtained by this method. As-grown crystals are characterized by means of scanning electron microscopy and powder X-ray diffraction measurements. The structural characterization shows that all crystals crystallize in monoclinic symmetry with the space group C2/m (No. 12). We have further investigated the magnetic properties of this series of single crystals. The magnetic measurements of the all as-grown single crystals show long-range antiferromagnetic order along all principal crystallographic axes. Overall, the Néel temperature TN is non-monotonous; with increasing Ni2+ doping, the temperature of the antiferromagnetic phase transition first decreases from 80 K for pristine Mn2P2S6 (x = 0) up to x = 0.5 and then increases again to 155 K for pure Ni2P2S6 (x = 1). The magnetic anisotropy switches from out-of-plane to in-plane as a function of composition in (Mn1−xNix)2P2S6 series. Transport studies under hydrostatic pressure on the parent compound Mn2P2S6 evidence an insulator-metal transition at an applied critical pressure of ~22 GPa.
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    Sequentially Processed P3HT/CN6-CP•−NBu4+ Films: Interfacial or Bulk Doping?
    (Weinheim : Wiley-VCH, 2020) Karpov, Yevhen; Kiriy, Nataliya; Formanek, Petr; Hoffmann, Cedric; Beryozkina, Tetyana; Hambsch, Mike; Al-Hussein, Mahmoud; Mannsfeld, Stefan C.B.; Büchner, Bernd; Debnath, Bipasha; Bretschneider, Michael; Krupskaya, Yulia; Lissel, Franziska; Kiriy, Anton
    Derivatives of the hexacyano-[3]-radialene anion radical (CN6-CP•−) emerge as a promising new family of p-dopants having a doping strength comparable to that of archetypical dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4TCNQ). Here, mixed solution (MxS) and sequential processing (SqP) doping methods are compared by using a model semiconductor poly(3-hexylthiophene) (P3HT) and the dopant CN6-CP•−NBu4 + (NBu4 + = tetrabutylammonium). MxS films show a moderate yet thickness-independent conductivity of ≈0.1 S cm−1. For the SqP case, the highest conductivity value of ≈6 S cm−1 is achieved for the thinnest (1.5–3 nm) films whereas conductivity drops two orders of magnitudes for 100 times thicker films. These results are explained in terms of an interfacial doping mechanism realized in the SqP films, where only layers close to the P3HT/dopant interface are doped efficiently, whereas internal P3HT layers remain essentially undoped. This structure is in agreement with transmission electron microscopy, atomic force microscopy, and Kelvin probe force microscopy results. The temperature-dependent conductivity measurements reveal a lower activation energy for charge carriers in SqP samples than in MxS films (79 meV vs 110 meV), which could be a reason for their superior conductivity. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim