2017, Radziunas, Mindaugas, Zeghuzi, Anissa, Fuhrmann, Jürgen, Koprucki, Thomas, Wünsche, Hans-Jürgen, Wenzel, Hans, Bandelow, Uwe

We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edgeemitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone.