2016, Niemann, R., Hahn, S., Diestel, A., Backen, A., Schultz, L., Nielsch, K., Wagner, M.F.-X., Fähler, S.

Magnetocaloric materials are promising as solid state refrigerants for more efficient and environmentally friendly cooling devices. The highest effects have been observed in materials that exhibit a first-order phase transition. These transformations proceed by nucleation and growth which lead to a hysteresis. Such irreversible processes are undesired since they heat up the material and reduce the efficiency of any cooling application. In this article, we demonstrate an approach to decrease the hysteresis by locally changing the nucleation barrier. We created artificial nucleation sites and analyzed the nucleation and growth processes in their proximity. We use Ni-Mn-Ga, a shape memory alloy that exhibits a martensitic transformation. Epitaxial films serve as a model system, but their high surface-to-volume ratio also allows for a fast heat transfer which is beneficial for a magnetocaloric regenerator geometry. Nanoindentation is used to create a well-defined defect. We quantify the austenite phase fraction in its proximity as a function of temperature which allows us to determine the influence of the defect on the transformation.

2016, Duschek, K., Pohl, D., Fähler, S., Nielsch, K., Leistner, K.

Electric field control of magnetization and anisotropy in layered structures with perpendicular magnetic anisotropy is expected to increase the versatility of spintronic devices. As a model system for reversible voltage induced changes of magnetism by magnetoionic effects, we present several oxide/metal heterostructures polarized in an electrolyte. Room temperature magnetization of Fe-O/Fe layers can be changed by 64% when applying only a few volts in 1M KOH. In a next step, the bottom interface of the in-plane magnetized Fe layer is functionalized by an L10 FePt(001) underlayer exhibiting perpendicular magnetic anisotropy. During subsequent electrocrystallization and electrooxidation, well defined epitaxial Fe3O4/Fe/FePt heterostructures evolve. The application of different voltages leads to a thickness change of the Fe layer sandwiched between Fe-O and FePt. At the point of transition between rigid magnet and exchange spring magnet regime for the Fe/FePt bilayer, this induces a large variation of magnetic anisotropy.

2011, Kaufmann, S., Niemann, R., Thersleff, T., Rößler, U.K., Heczko, O., Buschbeck, J., Holzapfel, B., Schultz, L., Fähler, S.

Diffusionless phase transitions are at the core of the multifunctionality of (magnetic) shape memory alloys, ferroelectrics and multiferroics. Giant strain effects under external fields are obtained in low symmetric modulated martensitic phases. We outline the origin of modulated phases, their connection with tetragonal martensite and consequences owing to their functional properties by analysing the martensitic microstructure of epitaxial Ni–Mn–Ga films from the atomic to the macroscale. Geometrical constraints at an austenite–martensite phase boundary act down to the atomic scale. Hence, a martensitic microstructure of nanotwinned tetragonal martensite can form. Coarsening of twin variants can reduce twin boundary energy, a process we could observe from the atomic to the millimetre scale. Coarsening is a fractal process, proceeding in discrete steps by doubling twin periodicity. The collective defect energy results in a substantial hysteresis, which allows the retention of modulated martensite as a metastable phase at room temperature. In this metastable state, elastic energy is released by the formation of a 'twins within twins' microstructure that can be observed from the nanometre to the millimetre scale. This hierarchical twinning results in mesoscopic twin boundaries. Our analysis indicates that mesoscopic boundaries are broad and diffuse, in contrast to the common atomically sharp twin boundaries of tetragonal martensite. We suggest that the observed extraordinarily high mobility of such mesoscopic twin boundaries originates from their diffuse nature that renders pinning by atomistic point defects ineffective.