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- ItemFrom atomistic tight-binding theory to macroscale drift–diffusion: Multiscale modeling and numerical simulation of uni-polar charge transport in (In,Ga)N devices with random fluctuations(Melville, NY : American Inst. of Physics, 2021) O’Donovan, Michael; Chaudhuri, Debapriya; Streckenbach, Timo; Farrell, Patricio; Schulz, Stefan; Koprucki, ThomasRandom alloy fluctuations significantly affect the electronic, optical, and transport properties of (In,Ga)N-based optoelectronic devices. Transport calculations accounting for alloy fluctuations currently use a combination of modified continuum-based models, which neglect to a large extent atomistic effects. In this work, we present a model that bridges the gap between atomistic theory and macroscopic transport models. To do so, we combine atomistic tight-binding theory and continuum-based drift–diffusion solvers, where quantum corrections are included via the localization landscape method. We outline the ingredients of this framework in detail and present first results for uni-polar electron transport in single and multi- (In,Ga)N quantum well systems. Overall, our results reveal that both random alloy fluctuations and quantum corrections significantly affect the current–voltage characteristics of uni-polar electron transport in such devices. However, our investigations indicate that the importance of quantum corrections and random alloy fluctuations can be different for single and multi-quantum well systems.
- ItemComparison of finite difference and finite volume simulations for a sc-drying mass transport model(Basel : MDPI AG, 2020) Selmer, Ilka; Farrell, Patricio; Smirnova, Irina; Gurikov, PavelDifferent numerical solutions of a previously developed mass transport model for supercritical drying of aerogel particles in a packed bed [Part 1: Selmer et al. 2018, Part 2: Selmer et al. 2019] are compared. Two finite difference discretizations and a finite volume method were used. The finite volume method showed a higher overall accuracy, in the form of lower overall Euclidean norm (l2) and maximum norm (l∞) errors, as well as lower mole balance errors compared to the finite difference methods. Additionally, the finite volume method was more efficient when the condition numbers of the linear systems to be solved were considered. In case of fine grids, the computation time of the finite difference methods was slightly faster but for 16 or fewer nodes the finite volume method was superior. Overall, the finite volume method is preferable for the numerical solution of the described drying model for aerogel particles in a packed bed. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
- ItemAssessing the quality of the excess chemical potential flux scheme for degenerate semiconductor device simulation(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Abdel, Dilara; Farrell, Patricio; Fuhrmann, JürgenThe van Roosbroeck system models current flows in (non-)degenerate semiconductor devices. Focusing on the stationary model, we compare the excess chemical potential discretization scheme, a flux approximation which is based on a modification of the drift term in the current densities, with another state-of-the-art Scharfetter-Gummel scheme, namely the diffusion-enhanced scheme. Physically, the diffusion-enhanced scheme can be interpreted as a flux approximation which modifies the thermal voltage. As a reference solution we consider an implicitly defined integral flux, using Blakemore statistics. The integral flux refers to the exact solution of a local two point boundary value problem for the continuous current density and can be interpreted as a generalized Scharfetter-Gummel scheme. All numerical discretization schemes can be used within a Voronoi finite volume method to simulate charge transport in (non-)degenerate semiconductor devices. The investigation includes the analysis of Taylor expansions, a derivation of error estimates and a visualization of errors in local flux approximations to extend previous discussions. Additionally, drift-diffusion simulations of a p-i-n device are performed.
- ItemOn thermodynamic consistency of a Scharfetter-Gummel scheme based on a modified thermal voltage for drift-diffusion equations with diffusion enhancement(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Koprucki, Thomas; Rotundo, Nella; Farrell, Patricio; Doan, Duy Hai; Fuhrmann, JürgenDriven by applications like organic semiconductors there is an increased interest in numerical simulations based on drift-diffusion models with arbitrary statistical distribution functions. This requires numerical schemes that preserve qualitative properties of the solutions, such as positivity of densities, dissipativity and consistency with thermodynamic equilibrium. An extension of the Scharfetter-Gummel scheme guaranteeing consistency with thermodynamic equilibrium is studied. It is derived by replacing the thermal voltage with an averaged diffusion enhancement for which we provide a new explicit formula. This approach avoids solving the costly local nonlinear equations defining the current for generalized Scharfetter-Gummel schemes.
- ItemWhat company does my news article refer to? Tackling multiclass problems with topic modeling(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Lübbering, Max; Kunkel, Julian; Farrell, PatricioWhile it is technically trivial to search for the company name to predict the company a new article refers to, it often leads to incorrect results. In this article, we compare the two approaches bag-of-words with k-nearest neighbors and Latent Dirichlet Allocation with k-nearest neighbor by assessing their applicability for predicting the S&P 500 company which is mentioned in a business news article or press release. Both approaches are evaluated on a corpus of 13k documents containing 84% news articles and 16% press releases. While the bag-of-words approach yields accurate predictions, it is highly inefficient due to its gigantic feature space. The Latent Dirichlet Allocation approach, on the other hand, manages to achieve roughly the same prediction accuracy (0.58 instead of 0.62) but reduces the feature space by a factor of seven.
- ItemMultilevel interpolation of divergence-free vector fields(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Farrell, Patricio; Gillow, Kathryn; Wendland, HolgerWe introduce a multilevel technique for interpolating scattered data of divergence-free vector fields with the help of matrix-valued compactly supported kernels. The support radius at a given level is linked to the mesh norm of the data set at that level. There are at least three advantages of this method: no grid structure is necessary for the implementation, the multilevel approach is computationally cheaper than solving a large one-shot system and the interpolant is guaranteed to be analytically divergence-free. Furthermore, though we will not pursue this here, our multiscale approach is able to represent multiple scales in the data if present. We will prove convergence of the scheme, stability estimates and give a numerical example.
- ItemA novel surface remeshing scheme via higher dimensional embedding and radial basis functions(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Dassi, Franco; Farrell, Patricio; Si, HangMany applications heavily rely on piecewise triangular meshes to describe complex surface geometries. High-quality meshes significantly improve numerical simulations. In practice, however, one often has to deal with several challenges. Some regions in the initial mesh may be overrefined, others too coarse. Additionally, the triangles may be too thin or not properly oriented. We present a novel mesh adaptation procedure which greatly improves the problematic input mesh and overcomes all of these drawbacks. By coupling surface reconstruction via radial basis functions with the higher dimensional embedding surface remeshing technique, we can automatically generate anisotropic meshes. Moreover, we are not only able to fill or coarsen certain mesh regions but also align the triangles according to the curvature of the reconstructed surface. This yields an acceptable trade-off between computational complexity and accuracy.
- ItemBlock preconditioners for linear systems arising from multiscale collocation with compactly supported RBFs(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Farrell, Patricio; Pestana, JenniferSymmetric collocation methods with radial basis functions allow approximation of the solution of a partial differential equation, even if the right-hand side is only known at scattered data points, without needing to generate a grid. However, the benefit of a guaranteed symmetric positive definite block system comes at a high computational cost. This cost can be alleviated somewhat by considering compactly supported radial basis functions and a multiscale technique. But the condition number and sparsity will still deteriorate with the number of data points. Therefore, we study certain block diagonal and triangular preconditioners. We investigate ideal preconditioners and determine the spectra of the preconditioned matrices before proposing more practical preconditioners based on a restricted additive Schwarz method with coarse grid correction (ARASM). Numerical results verify the effectiveness of the preconditioners.
- ItemNumerical methods for drift-diffusion models(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Farrell, Patricio; Rotundo, Nella; Doan, Duy Hai; Kantner, Markus; Fuhrmann, Jürgen; Koprucki, ThomasThe van Roosbroeck system describes the semi-classical transport of free electrons and holes in a self-consistent electric field using a drift-diffusion approximation. It became the standard model to describe the current flow in semiconductor devices at macroscopic scale. Typical devices modeled by these equations range from diodes, transistors, LEDs, solar cells and lasers to quantum nanostructures and organic semiconductors. The report provides an introduction into numerical methods for the van Roosbroeck system. The main focus lies on the Scharfetter-Gummel finite volume disretization scheme and recent efforts to generalize this approach to general statistical distribution functions.
- ItemComparison of thermodynamically consistent charge carrier flux discretizations for Fermi-Dirac and Gauss-Fermi statistics(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Farrell, Patricio; Patriarca, Matteo; Fuhrmann, Jürgen; Koprucki, ThomasWe compare three thermodynamically consistent ScharfetterGummel schemes for different distribution functions for the carrier densities, including the FermiDirac integral of order 1/2 and the GaussFermi integral. The most accurate (but unfortunately also most costly) generalized ScharfetterGummel scheme requires the solution of an integral equation. We propose a new method to solve this integral equation numerically based on Gauss quadrature and Newtons method. We discuss the quality of this approximation and plot the resulting currents for FermiDirac and GaussFermi statistics. Finally, by comparing two modified (diffusion-enhanced and inverse activity based) ScharfetterGummel schemes with the more accurate generalized scheme, we show that the diffusion-enhanced ansatz leads to considerably lower flux errors, confirming previous results (J. Comp. Phys. 346:497-513, 2017).