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Now showing 1 - 5 of 5
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    Investigation of the strain-sensitive superconducting transition of BaFe1.8Co0.2As2 thin films utilizing piezoelectric substrates
    (Milton Park : Taylor & Francis, 2014) Trommler, S.; Hänisch, J.; Iida, K.; Kurth, F.; Schultz, L.; Holzapfel, B.; Hühne, R.
    The preparation of biaxially textured BaFe1.8Co0.2As2 thin films has been optimized on MgO single crystals and transfered to piezoelectric (001) Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. By utilizing the inverse piezoelectric effect the lattice parameter of these substrates can be controlled applying an electric field, leading to a induction of biaxial strain into the superconducting layer. High electric fields were used to achieve a total strain of up to 0.05% at low temperatures. A sharpening of the resistive transition and a shift of about 0.6 K to higher temperatures was found at a compressive strain of 0.035%.
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    Bicrystalline grain boundary junctions of Co-doped and P-doped Ba-122 thin films
    (Milton Park : Taylor & Francis, 2014) Schmidt, S.; Döring, S.; Schmidl, F.; Kurth, F.; Iida, K.; Holzapfel, B.; Kawaguchi, T.; Mori, Y.; Ikuta, H.; Seidel, P.
    We prepared GB junctions of Ba(Fe0.9Co0.1)2As2 thin films on bicrystalline [00 l]-tilt SrTiO3 substrates. The junctions show clear Josephson effects. Electrical characterization shows asymmetric I-V characteristics which can be described within the resistively shunted junction (RSJ) model. A large excess current is observed. Their formal ICRN product is 20.2 μV at 4.2 K, which is decreased to 6.5 μV when taking Iex into account. Fabrication methods to increase this value are discussed. Additionally, measurements on GB junctions of BaFe2(As0.66P0.34)2 thin films on LSAT bicrystalline substrates are shown. Their symmetric RSJ/flux flow-behavior exhibits a formal ICRN product of 45 μV, whereas the excess corrected value is ll μV.
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    Modulated martensite: Why it forms and why it deforms easily
    (Milton Park : Taylor & Francis, 2011) Kaufmann, S.; Niemann, R.; Thersleff, T.; Rößler, U.K.; Heczko, O.; Buschbeck, J.; Holzapfel, B.; Schultz, L.; Fähler, S.
    Diffusionless phase transitions are at the core of the multifunctionality of (magnetic) shape memory alloys, ferroelectrics and multiferroics. Giant strain effects under external fields are obtained in low symmetric modulated martensitic phases. We outline the origin of modulated phases, their connection with tetragonal martensite and consequences owing to their functional properties by analysing the martensitic microstructure of epitaxial Ni–Mn–Ga films from the atomic to the macroscale. Geometrical constraints at an austenite–martensite phase boundary act down to the atomic scale. Hence, a martensitic microstructure of nanotwinned tetragonal martensite can form. Coarsening of twin variants can reduce twin boundary energy, a process we could observe from the atomic to the millimetre scale. Coarsening is a fractal process, proceeding in discrete steps by doubling twin periodicity. The collective defect energy results in a substantial hysteresis, which allows the retention of modulated martensite as a metastable phase at room temperature. In this metastable state, elastic energy is released by the formation of a 'twins within twins' microstructure that can be observed from the nanometre to the millimetre scale. This hierarchical twinning results in mesoscopic twin boundaries. Our analysis indicates that mesoscopic boundaries are broad and diffuse, in contrast to the common atomically sharp twin boundaries of tetragonal martensite. We suggest that the observed extraordinarily high mobility of such mesoscopic twin boundaries originates from their diffuse nature that renders pinning by atomistic point defects ineffective.
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    Tuning functional properties by plastic deformation
    (Milton Park : Taylor & Francis, 2009) Kwon, A.R.; Neu, V.; Matias, V.; Hänisch, J.; Hühne, R.; Freudenberger, J.; Holzapfel, B.; Schultz, L.; Fähler, S.
    It is well known that a variation of lattice constants can strongly influence the functional properties of materials. Lattice constants can be influenced by external forces; however, most experiments are limited to hydrostatic pressure or biaxial stress. Here, we present an experimental approach that imposes a large uniaxial strain on epitaxially grown films in order to tune their functional properties. A substrate made of a ductile metal alloy covered with a biaxially oriented MgO layer is used as a template for growth of epitaxial films. By applying an external plastic strain, we break the symmetry within the substrate plane compared to the as-deposited state. The consequences of 2% plastic strain are examined for an epitaxial hard magnetic Nd2Fe14B film and are found to result in an elliptical distortion of the in-plane anisotropy below the spin-reorientation temperature. Our approach is a versatile method to study the influence of large plastic strain on various materials, as the MgO(001) layer used is a common substrate for epitaxial growth.
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    Reversible shift in the superconducting transition for La1.85Sr0.15CuO4 and BaFe1.8Co0.2As2 using piezoelectric substrates
    (Milton Park : Taylor & Francis, 2010) Trommler, S.; Hühne, R.; Iida, K.; Pahlke, P.; Haindl, S.; Schultz, L.; Holzapfel, B.
    The use of piezoelectric substrates enables dynamic observation of the strain-dependent properties of functional materials. Based on studies with La1.85Sr0.15CuO4 (LSCO), we extended this approach to the iron arsenic superconductors represented by BaFe2− xCoxAs2 to investigate strain-driven changes in detail. We demonstrate that epitaxial thin films can be prepared on (001) Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates using pulsed laser deposition. The structural and electric properties of grown films were characterized in detail. A reversible shift of the superconducting transition of 0.4 K for LSCO and 0.2 K for BaFe1.8Co0.2As2 was observed on applying biaxial strains of 0.022 and 0.017%, respectively.