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- ItemFigures of merit of thermoelectric and bolometric thermal radiation sensors(Göttingen : Copernicus, 2013) Dillner, U.; Kessler, E.; Meyer, H.-G.Figures of merit condensing the performance parameters of radiation sensors such as responsivity, noise equivalent power, and time constant in a single number can be useful for rating the performance of a particular sensor in comparison to other ones or to fundamental performance limits. The classification system and the figures of merit of radiation sensors introduced by R. C. Jones are revisited for thermal radiation sensors with the focus on thermopiles and bolometers. As a result it is stated that radiation thermopiles and bolometers should be classified differently: type III detectors for thermopiles vs. type II detectors for bolometers. Modified figures of merit are suggested and relations between them given. The figures of merit are applied in an overview on state-of-the-art thermopiles and bolometers operated at room temperature.
- ItemChemical and electrochemical synthesis of platinum black(London : Nature Publishing Group, 2017) Stanca, S.E.; Hänschke, F.; Ihring, A.; Zieger, G.; Dellith, J.; Kessler, E.; Meyer, H.-G.We present electrochemical and chemical synthesis of platinum black at room temperature in aqueous and non-aqueous media. X-ray analysis established the purity and crystalline nature. The electron micrographs indicate that the nanostructures consist of platinum crystals that interconnect to form porous assemblies. Additionally, the electron micrographs of the platinum black thin layer, which was electrochemically deposited on different metallic and semiconductive substrates (aluminium, platinum, silver, gold, tin-cooper alloy, indium-tin-oxide, stainless steel, and copper), indicate that the substrate influences its porous features but not its absorbance characteristics. The platinum black exhibited a broad absorbance and low reflectance in the ultraviolet, visible, and infrared regions. These characteristics make this material suitable for use as a high-temperature resistant absorber layer for the fabrication of microelectronics.