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    Towards a life-time-limited 8-octave-infrared photoconductive germanium detector
    (Bristol : IOP Publ., 2015) Pavlov, S.G.; Deßmann, N.; Pohl, A.; Abrosimov, N.V.; Mittendorff, M.; Winnerl, S.; Zhukavin, R.K; Tsyplenkov, V.V.; Shengurov, D.V.; Shastin, V.N.; Hübers, H.-W.
    Ultrafast, ultra-broad-band photoconductive detector based on heavily doped and highly compensated germanium has been demonstrated. Such a material demonstrates optical sensitivity in the more than 8 octaves, in the infrared, from about 2 mm to about 8 μm. The spectral sensitivity peaks up between 2 THz and 2.5 THz and is slowly reduced towards lower and higher frequencies. The life times of free electrons/holes measured by a pump-probe technique approach a few tenths of picoseconds and remain almost independent on the optical input intensity and on the temperature of a detector in the operation range. During operation, a detector is cooled down to liquid helium temperature but has been approved to detect, with a reduced sensitivity, up to liquid nitrogen temperature. The response time is shorter than 200 ps that is significantly faster than previously reported times.
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    Relaxation of Coulomb States in semiconductors probed by FEL radiation
    (Les Ulis : EDP Sciences, 2018) Zhukavin, R.Kh.; Kovalevsky, K.A.; Tsyplenkov, V.V.; Pavlov, S.G.; Hübers, H-W.; Choporova, Yu.Yu.; Knyazev, B.A.; Klopf, J.M.; Redlich, B.; Abrosimov, N.V.; Astrov, Yu.A.; Shastin, V.N.; Silaev, A.A.
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