2006, Wosnitza, J., Goll, G., Bianchi, A.D., Bergk, B., Kozlova, N., Opahle, I., Elgazzar, S., Richter, Manuel, Stockert, O., Löhneysen, H.V., Yoshino, T., Takabatake, T.

The half-Heusler compounds CeBiPt and LaBiPt are semimetals with very low charge-carrier concentrations as evidenced by Shubnikov–de Haas (SdH) and Hall-effect measurements. Neutron-scattering results reveal a simple antiferromagnetic structure in CeBiPt below TN = 1.15 K. The band structure of CeBiPt sensitively depends on temperature, magnetic field and stoichiometry. Above a certain, sample-dependent, threshold field (B>25 T), the SdH signal disappears and the Hall coefficient reduces significantly. These effects are absent in the non-4f compound LaBiPt. Electronic-band-structure calculations can well explain the observed behaviour by a 4f-polarization-induced Fermi-surface modification.

2009, Zhang, Hongbin, Richter, Manuel, Koepernik, Klaus, Opahle, Ingo, Tasnádi, Ferenc, Eschrig, Helmut

In a recent experiment, Weisheit et al (2007 Science 315 349) demonstrated that the coercivity of thin L10 FePt and FePd films can be modified by the external electric field in an electrochemical environment. Here, this observation is confirmed by density functional calculations for the intrinsic magnetic anisotropy. The origin of the effect is clarified by means of a general and simple method to simulate charged metal surfaces. It is predicted that the coercivity of thin CoPt films is much more susceptible to electric field than that of FePt films.

2001, Richter, Manuel, Eschrig, Helmut

[no abstract available]