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search.filters.applied.f.access: openAccess × Author: Wünsche, Hans-Jürgen × Type: Text × Publisher: Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik × WGL Institute: FBH ×

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    Efficient coupling of electro-optical and heat-transport models for broad-area semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Radziunas, Mindaugas; Fuhrmann, Jürgen; Zeghuzi, Anissa; Wünsche, Hans-Jürgen; Koprucki, Thomas; Brée, Carsten; Wenzel, Hans; Bandelow, Uwe
    In this work, we discuss the modeling of edge-emitting high-power broad-area semiconductor lasers. We demonstrate an efficient iterative coupling of a slow heat transport (HT) model defined on multiple vertical-lateral laser cross-sections with a fast dynamic electro-optical (EO) model determined on the longitudinal-lateral domain that is a projection of the device to the active region of the laser. Whereas the HT-solver calculates temperature and thermally-induced refractive index changes, the EO-solver exploits these distributions and provides time-averaged field intensities, quasi-Fermi potentials, and carrier densities. All these time-averaged distributions are used repetitively by the HT-solver for the generation of the heat sources entering the HT problem solved in the next iteration step.
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    Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far field divergence
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Zeghuzi, Anissa; Radziunas, Mindaugas; Wenzel, Hans; Wünsche, Hans-Jürgen; Bandelow, Uwe; Knigge, Andrea
    The effect of current spreading on the lateral farfield divergence of highpower broadarea lasers is investigated with a timedependent model using different descriptions for the injection of carriers into the active region. Most simulation tools simply assume a spatially constant injection current density below the contact stripe and a vanishing current density beside. Within the driftdiffusion approach, however, the injected current density is obtained from the gradient of the quasiFermi potential of the holes, which solves a Laplace equation in the pdoped region if recombination is neglected. We compare an approximate solution of the Laplace equation with the exact solution and show that for the exact solution the highest farfield divergence is obtained. We conclude that an advanced modeling of the profiles of the injection current densities is necessary for a correct description of farfield blooming in broadarea lasers.