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Revealing all states of dewetting of a thin gold layer on a silicon surface by nanosecond laser conditioning
Dewetting is a ubiquitous phenomenon which can be applied to the laser synthesis of nanoparticles. A classical spinodal dewetting process takes place in four successive states, which differ from each other in their morphology. In this study all states are revealed by interaction of pulsed nanosecond UV laser light with thin gold layers with thicknesses between 1 nm and 10 nm on (100) silicon wafers. The specific morphologies of the dewetting states are discussed with particular emphasis on the state boundaries. The main parameter determining which state is formed is not the duration for which the gold remains liquid, but rather the input energy provided by the laser. This shows that each state transition has a separate measurable activation energy. The temperature during the nanosecond pulses and the duration during which the gold remains liquid was determined by simulation using the COMSOL Multiphysics® software package. Using these calculations, an accurate local temperature profile and its development over time was simulated. An analytical study of the morphologies and formed structures was performed using Minkowski measures. With aid of this tool, the laser induced structures were compared with thermally annealed samples, with perfectly ordered structures and with perfectly random structures. The results show that both, structures of the laser induced and the annealed samples, strongly resemble the perfectly ordered structures. This reveals a close relationship between these structures and suggests that the phenomenon under investigation is indeed a spinodal dewetting generated by an internal material wave function. The purposeful generation of these structures and the elucidation of the underlying mechanism of dewetting by short pulse lasers may assist the realisation of various technical elements such as nanowires in science and industry. © 2020
Heading for brighter and faster β-Ga2O3 scintillator crystals
Czochralski-grown β-Ga2O3 and β-Ga2O3:Si crystals with the free electron concentrations between 2.5·1016 and 4.3·1018 cm−3 have been characterized by means of pulse height and scintillation time profile measurements in order to assess their basic scintillation properties. At room temperature, with increasing free electron concentration in the studied range, the scintillation yields decrease from 8920 to 1930 ph/MeV, while the mean scintillation decay times pare down from 989 to 61 ns. However, when the brightest β-Ga2O3 sample is cooled down below 100 K, its scintillation yield exceeds 20000 ph/MeV.
Self-stabilization of the equilibrium state in ferroelectric thin films
(K,Na)NbO3 is a lead-free and sustainable ferroelectric material with electromechanical parameters comparable to Pb(Zr,Ti)O3 (PZT) and other lead-based solid solutions. It is therefore a promising candidate for caloric cooling and energy harvesting applications. Specifically, the structural transition from the low-temperature Mc- to the high-temperature c-phase displays a rich hierarchical order of domains and superdomains, that forms at specific strain conditions. The relevant length scales are few tens of nanometers for the domain and few micrometers for the superdomain size, respectively. Phase-field calculations show that this hierarchical order adds to the total free energy of the solid. Thus, domains and their formation has a strong impact on the functional properties relevant for electrocaloric cooling or energy harvesting applications. However, monitoring the formation of domains and superdomains is difficult and requires both, high spatial and high temporal resolution of the experiment. Synchrotron-based time-resolved X-ray diffraction methods in combination with scanning imaging X-ray microscopy is applied to resolve the local dynamics of the domain morphology with sub-micrometer spatial and nanosecond temporal resolution. In this regime, the material displays a novel self-stabilization mechanism of the domain morphology, which may be a general property of first-order phase transitions.
Low temperature thermoluminescence of β-Ga2O3 scintillator
Low temperature thermoluminescence of β-Ga2O3, β-Ga2O3:Al and β-Ga2O3:Ce has been investigated. Glow curves have been analyzed quantitatively using a rate equations model in order to determine the traps parameters, such as activation energies, capture cross-sections and probabilities of recombination and retrapping.
AlF3-assisted flux growth of mullite whiskers and their application in fabrication of porous mullite-alumina monoliths
Mullite is a promising material with its competitive thermochemical and mechanical properties. Although mullite could be obtained by several synthesis methods, the flux method emerges with its advantages over other methods. However, obtaining mullite whiskers with a high aspect ratio and length for ceramic reinforcements is still challenging. In this work, mullite whiskers were grown from AlF3-assisted flux. The addition of AlF3 to flux salt not only decreases the formation temperature of mullite to as low as 700 °C and suppresses the formation of corundum side phase, but also increases the length and aspect ratio of the whiskers. The obtained mullite whiskers were used as reinforcement for porous alumina monoliths prepared by the freeze casting route and subsequent sintering at 1500 °C. The fabricated mullite-alumina monoliths show competitive compressive strength of 25.7 MPa while having as high as 70.6% porosity, which makes them a potential candidate for membrane applications.