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- ItemEvaluating arbitrary strain configurations and doping in graphene with Raman spectroscopy(Bristol : IOP Publ., 2017-11-6) Mueller, Niclas S.; Heeg, Sebastian; Peña Alvarez, Miriam; Kusch, Patryk; Wasserroth, Sören; Clark, Nick; Schedin, Fredrik; Parthenios, John; Papagelis, Konstantinos; Galiotis, Costas; Kalbáč, Martin; Vijayaraghavan, Aravind; Huebner, Uwe; Gorbachev, Roman; Frank, Otakar; Reich, StephanieThe properties of graphene depend sensitively on strain and doping affecting its behavior in devices and allowing an advanced tailoring of this material. A knowledge of the strain configuration, i.e. the relative magnitude of the components of the strain tensor, is particularly crucial, because it governs effects like band-gap opening, pseudo-magnetic fields, and induced superconductivity. It also enters critically in the analysis of the doping level. We propose a method for evaluating unknown strain configurations and simultaneous doping in graphene using Raman spectroscopy. In our analysis we first extract the bare peak shift of the G and 2D modes by eliminating their splitting due to shear strain. The shifts from hydrostatic strain and doping are separated by a correlation analysis of the 2D and G frequencies, where we find Delta omega(2D)/Delta omega(G) = 2.21 +/- 0.05 for pure hydrostatic strain. We obtain the local hydrostatic strain, shear strain and doping without any assumption on the strain configuration prior to the analysis, as we demonstrate for two model cases: Graphene under uniaxial stress and graphene suspended on nanostructures that induce strain. Raman scattering with circular corotating polarization is ideal for analyzing frequency shifts, especially for weak strain when the peak splitting by shear strain cannot be resolved.
- ItemAnisotropic solid-liquid interface kinetics in silicon: An atomistically informed phase-field model(Bristol : IOP Publ., 2017) Bergmann, S.; Albe, K.; Flege, E.; Barragan-Yani, D.A.; Wagner, B.We present an atomistically informed parametrization of a phase-field model for describing the anisotropic mobility of liquid–solid interfaces in silicon. The model is derived from a consistent set of atomistic data and thus allows to directly link molecular dynamics and phase field simulations. Expressions for the free energy density, the interfacial energy and the temperature and orientation dependent interface mobility are systematically fitted to data from molecular dynamics simulations based on the Stillinger–Weber interatomic potential. The temperature-dependent interface velocity follows a Vogel–Fulcher type behavior and allows to properly account for the dynamics in the undercooled melt.
- ItemHausdorff metric BV discontinuity of sweeping processes(Bristol : IOP Publ., 2016) Klein, Olaf; Recupero, VincenzoSweeping processes are a class of evolution differential inclusions arising in elastoplasticity and were introduced by J.J. Moreau in the early seventies. The solution operator of the sweeping processes represents a relevant example of rate independent operator. As a particular case we get the so called play operator, which is a typical example of a hysteresis operator. The continuity properties of these operators were studied in several works. In this note we address the continuity with respect to the strict metric in the space of functions of bounded variation with values in the metric space of closed convex subsets of a Hilbert space. We provide counterexamples showing that for all BV-formulations of the sweeping process the corresponding solution operator is not continuous when its domain is endowed with the strict topology of BV and its codomain is endowed with the L1-topology. This is at variance with the play operator which has a BV-extension that is continuous in this case.
- ItemX-ray spectroscopy of super-intense laser-produced plasmas for the study of nonlinear processes. Comparison with PIC simulations(Bristol : IOP Publ., 2017) Dalimier, E.; Ya Faenov, A.; Oks, E.; Angelo, P.; Pikuz, T.A.; Fukuda, Y.; Andreev, A.; Koga, J.; Sakaki, H.; Kotaki, H.; Pirozhkov, A.; Hayashi, Y.; Skobelev, I.Yu.; Pikuz, S.A.; Kawachi, T.; Kando, M.; Kondo, K.; Zhidkov, A.; Tubman, E.; Butler, N.M.H.; Dance, R.J.; Alkhimova, M.A.; Booth, N.; Green, J.; Gregory, C.; McKenna, P.; Woolsey, N.; Kodama, R.We present X-ray spectroscopic diagnostics in femto-second laser-driven experiments revealing nonlinear phenomena caused by the strong coupling of the laser radiation with the created plasma. Among those nonlinear phenomena, we found the signatures of the Two Plasmon Decay (TPD) instability in a laser-driven CO2 cluster-based plasma by analyzing the Langmuir dips in the profile of the O VIII Lyϵ line, caused by the Langmuir waves created at the high laser intensity 3 1018Wcm-2. With similar laser intensities, we reveal also the nonlinear phenomenon of the Second Harmonic Generation (SHG) of the laser frequency by analyzing the nonlinear phenomenon of satellites of Lyman δ and ϵ lines of Ar XVII. In the case of relativistic laser-plasma interaction we discovered the Parametric Decay Instability (PDI)-induced ion acoustic turbulence produced simultaneously with Langmuir waves via irradiation of thin Si foils by laser intensities of 1021Wcm-2.
- ItemThe spin-flip scattering effect in the spin transport in silicon doped with bismuth(Bristol : IOP Publ., 2017) Ezhevskii, A.A.; Detochenko, A.P.; Soukhorukov, A.V.; Guseinov, D.V.; Kudrin, A.V.; Abrosimov, N.V.; Riemann, H.Spin transport of conduction electrons in silicon samples doped with bismuth in the 1.1•1013 - 7.7•1015 cm-3 concentration range was studied by the Hall effect measurements. The dependence of the Hall voltage magnitude on the magnetic field is the sum of the normal and spin Hall effects. The electrons are partially polarized by an external magnetic field and are scattered by the bismuth spin-orbit potential. Spin-flip scattering results in the additional electromotive force which compensates the normal Hall effect in strong magnetic fields.
- ItemIntracycle interference in ionization of Ar by a laser assisted XUV pulse(Bristol : IOP Publ., 2017) Arbó, D.G.; López, S. D.; Kubin, M.; Hummert, J.; Vrakking, M.J.J.; Kornilov, O.Synopsis We present a theoretical and experimental study of the subcycle interference in laser assisted XUV ionization of Ar atoms. Averaging over the focal volume happens to blur the intracycle interference, which thus cannot be measured directly. We show that even at these conditions, the intracycle interference can be obtained through the subtraction of two different angle and energy-resolved distributions at slightly different laser intensities.
- ItemHigh-order harmonic generation by polyatomic molecules(Bristol : IOP Publ., 2017) Odžak, S.; Hasović, E.; Milošević, D.B.We present a theory of high-order harmonic generation by arbitrary polyatomic molecules based on the molecular strong-field approximation (MSFA) in the framework of the S-matrix theory. A polyatomic molecule is modeled by an (N + 1)-particle system, which consists of N heavy atomic (ionic) centers and an electron. We derived various versions (with or without the dressing of the initial and/or final molecular state) of the MSFA. The general expression for the T-matrix element takes a simple form for neutral polyatomic molecules. We show the existence of the interference minima in the harmonic spectrum and explain these minima as a multiple-slit type of interference. This is illustrated by numerical examples for the nitrous oxide (N2O) molecule exposed to strong linearly polarized laser field.
- ItemElectron Rescattering in a Bicircular Laser Field(Bristol : IOP Publ., 2017) Hasović, E.; Becker, W.; Milošević, D.B.We investigate high-order above-threshold ionization (HATI) of krypton atoms by a bicircular laser field, which consists of two coplanar co- or counter-rotating circularly polarized fields of frequencies rw and sw. We show that the photoelectron spectra in the HATI process, presented in the momentum plane, exhibit the same discrete rotational symmetry as the driving field. We also analyze HATI spectra for various combinations of the intensities of two field components for co- and counter-rotating fields. We find that the appearance of high-energy plateau for the counter-rotating case is vary sensitive to the laser intensity ratio, while the plateau is always absent for the co-rotating bicircular field.
- ItemEvidence for Efficient Pathway to Produce Slow Electrons by Ground-state Dication in Clusters(Bristol : IOP Publ., 2017) You, Daehyun; Fukuzawa, Hironobu; Sakakibara, Yuta; Takanashi, Tsukasa; Ito, Yuta; Maliyar, Gianluigi G.; Motomura, Koji; Nagaya, Kiyonobu; Nishiyama, Toshiyuki; Asa, Kazuki; Sato, Yuhiro; Saito, Norio; Oura, Masaki; Schöffler, Markus; Kastirke, Gregor; Hergenhahn, Uwe; Stumpf, Vasili; Gohkberg, Kirill; Kuleff, Alexander I.; Cederbaum, Lorenz S.; Ueda, KiyoshiWe present an experimental evidence for a so-far unobserved, but potentially very important step relaxation cascades following inner-shell ionization of a composite system: Multiply charged ionic states created after Auger decay may be neutralized by electron transfer from a neighboring species, producing at the same time a low-energy free electron. This electron transfer-mediated decay (ETMD) called process is effective even after Auger decay into the dicationic ground state. Here, we report the ETMD of Ne2+ produced after Ne 1s photoionization in Ne-Kr mixed clusters.
- ItemReactive ion beam figuring of optical aluminium surfaces(Bristol : IOP Publ., 2017) Bauer, Jens; Frost, Frank; Arnold, ThomasUltra-smooth and arbitrarily shaped reflective optics are necessary for further progress in EUV/XUV lithography, x-ray and synchrotron technology. As one of the most important technological mirror optic materials, aluminium behaves in a rather difficult way in ultra-precision machining with such standard techniques as diamond-turning and subsequent ion beam figuring (IBF). In particular, in the latter, a strong surface roughening is obtained. Hence, up to now it has not been possible to attain the surface qualities required for UV or just visible spectral range applications. To overcome the limitations mainly caused by the aluminium alloy structural and compositional conditions, a reactive ion beam machining process using oxygen process gas is evaluated. To clarify the principle differences in the effect of oxygen gas contrary to oxygen ions on aluminium surface machining, we firstly focus on chemical-assisted ion beam etching (CAIBE) and reactive ion beam etching (RIBE) experiments in a phenomenological manner. Then, the optimum process route will be explored within a more quantitative analysis applying the concept of power spectral density (PSD) for a sophisticated treatment of the surface topography. Eventually, the surface composition is examined by means of dynamic secondary ion mass spectrometry (SIMS) suggesting a characteristic model scheme for the chemical modification of the aluminium surface during oxygen ion beam machining. Monte Carlo simulations were applied to achieve a more detailed process conception.