(Milton Park : Taylor & Francis, 2013) Mogilatenko, A.; Kirmse, H.; Hagedorn, S.; Richter, E.; Zeimer, U.; Weyers, M.; Tränkle, G.
a-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [1bar 100]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers can be explained by nucleation of c-plane (Al,Ga)N with [11bar 20](Al,Ga)N
