Search Results

Now showing 1 - 3 of 3
Loading...
Thumbnail Image
Item

Influence of annealing on microstructure and mechanical properties of ultrafine-grained Ti45Nb

2019, Völker, B., Maier-Kiener, V., Werbach, K., Müller, T., Pilz, S., Calin, M., Eckert, J., Hohenwarter, A.

Beta-Ti alloys have been intensively investigated in the last years because of their favorable low Young's moduli, biocompatibility and bio-inertness, making these alloys interesting candidates for implant materials. Due to their low mechanical strength, efforts are currently devoted to increasing it. A promising way to improve the strength is to tailor the microstructure using severe plastic deformation (SPD). In this investigation high pressure torsion was used to refine the microstructure of a Ti-45wt.%Nb alloy inducing a grain size of ~50 nm. The main focus of the subsequent investigations was devoted to the thermal stability of the microstructure. Isochronal heat-treatments performed for 30 min in a temperature range up to 500 °C caused an increase of hardness with a peak value at 300 °C before the hardness decreased at higher temperatures. Simultaneously, a distinct temperature-dependent variation of the Young's modulus was also measured. Tensile tests revealed an increase in strength after annealing compared to the SPD-state. Microstructural investigations showed that annealing causes the formation of α-Ti. The findings suggest that the combination of severe plastic deformation with subsequent heat treatment provides a feasible way to improve the mechanical properties of SPD-deformed β-Ti alloys making them suitable for higher strength applications.

Loading...
Thumbnail Image
Item

Mg3(Bi,Sb)2 single crystals towards high thermoelectric performance

2020, Pan, Yu, Yao, Mengyu, Hong, Xiaochen, Zhu, Yifan, Fan, Fengren, Imasato, Kazuki, He, Yangkun, Hess, Christian, Fink, Jörg, Yang, Jiong, Büchner, Bernd, Fu, Chenguang, Snyder, G. Jeffrey, Felser, Claudia

The rapid growth of the thermoelectric cooler market makes the development of novel room temperature thermoelectric materials of great importance. Ternary n-type Mg3(Bi,Sb)2 alloys are promising alternatives to the state-of-the-art Bi2(Te,Se)3 alloys but grain boundary resistance is the most important limitation. n-type Mg3(Bi,Sb)2 single crystals with negligible grain boundaries are expected to have particularly high zT but have rarely been realized due to the demanding Mg-rich growth conditions required. Here, we report, for the first time, the thermoelectric properties of n-type Mg3(Bi,Sb)2 alloyed single crystals grown by a one-step Mg-flux method using sealed tantalum tubes. High weighted mobility ∼140 cm2 V−1 s−1 and a high zT of 0.82 at 315 K are achieved in Y-doped Mg3Bi1.25Sb0.75 single crystals. Through both experimental angle-resolved photoemission spectroscopy and theoretical calculations, we denote the origin of the high thermoelectric performance from a point of view of band widening effect and electronegativity, as well as the necessity to form high Bi/Sb ratio ternary Mg3(Bi,Sb)2 alloys. The present work paves the way for further development of Mg3(Bi,Sb)2 for near room temperature thermoelectric applications.

Loading...
Thumbnail Image
Item

Unveiling the phonon scattering mechanisms in half-Heusler thermoelectric compounds

2020, He, Ran, Zhu, Taishan, Wang, Yumei, Wolff, Ulrike, Jaud, Jean-Christophe, Sotnikov, Andrei, Potapov, Pavel, Wolf, Daniel, Ying, Pingjun, Wood, Max, Liu, Zhenhui, Feng, Le, Perez Rodriguez, Nicolas, Snyder, G. Jeffrey, Grossman, Jeffrey C., Nielsch, Kornelius, Schierning, Gabi

Half-Heusler (HH) compounds are among the most promising thermoelectric (TE) materials for large-scale applications due to their superior properties such as high power factor, excellent mechanical and thermal reliability, and non-toxicity. Their only drawback is the remaining-high lattice thermal conductivity. Various mechanisms were reported with claimed effectiveness to enhance the phonon scattering of HH compounds including grain-boundary scattering, phase separation, and electron–phonon interaction. In this work, however, we show that point-defect scattering has been the dominant mechanism for phonon scattering other than the intrinsic phonon–phonon interaction for ZrCoSb and possibly many other HH compounds. Induced by the charge-compensation effect, the formation of Co/4d Frenkel point defects is responsible for the drastic reduction of lattice thermal conductivity in ZrCoSb1−xSnx. Our work systematically depicts the phonon scattering profile of HH compounds and illuminates subsequent material optimizations.