Filters

2020 - 20223

More filters

2022 - 20233
Reset filters

Settings

search.filters.applied.f.access: openAccess × End date: 2024 × Start date: 2020 × DDC: 500 × Subject: electron × Subject: magnetic field ×

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    Signatures of a magnetic-field-induced Lifshitz transition in the ultra-quantum limit of the topological semimetal ZrTe5
    ([London] : Nature Publishing Group UK, 2022) Galeski, S.; Legg, H.F.; Wawrzyńczak, R.; Förster, T.; Zherlitsyn, S.; Gorbunov, D.; Uhlarz, M.; Lozano, P.M.; Li, Q.; Gu, G.D.; Felser, C.; Wosnitza, J.; Meng, T.; Gooth, J.
    The quantum limit (QL) of an electron liquid, realised at strong magnetic fields, has long been proposed to host a wealth of strongly correlated states of matter. Electronic states in the QL are, for example, quasi-one dimensional (1D), which implies perfectly nested Fermi surfaces prone to instabilities. Whereas the QL typically requires unreachably strong magnetic fields, the topological semimetal ZrTe5 has been shown to reach the QL at fields of only a few Tesla. Here, we characterize the QL of ZrTe5 at fields up to 64 T by a combination of electrical-transport and ultrasound measurements. We find that the Zeeman effect in ZrTe5 enables an efficient tuning of the 1D Landau band structure with magnetic field. This results in a Lifshitz transition to a 1D Weyl regime in which perfect charge neutrality can be achieved. Since no instability-driven phase transitions destabilise the 1D electron liquid for the investigated field strengths and temperatures, our analysis establishes ZrTe5 as a thoroughly understood platform for potentially inducing more exotic interaction-driven phases at lower temperatures.
  • Thumbnail Image
    Item
    Gate controlled valley polarizer in bilayer graphene
    ([London] : Nature Publishing Group UK, 2020) Chen, Hao; Zhou, Pinjia; Liu, Jiawei; Qiao, Jiabin; Oezyilmaz, Barbaros; Martin, Jens
    Sign reversal of Berry curvature across two oppositely gated regions in bilayer graphene can give rise to counter-propagating 1D channels with opposite valley indices. Considering spin and sub-lattice degeneracy, there are four quantized conduction channels in each direction. Previous experimental work on gate-controlled valley polarizer achieved good contrast only in the presence of an external magnetic field. Yet, with increasing magnetic field the ungated regions of bilayer graphene will transit into the quantum Hall regime, limiting the applications of valley-polarized electrons. Here we present improved performance of a gate-controlled valley polarizer through optimized device geometry and stacking method. Electrical measurements show up to two orders of magnitude difference in conductance between the valley-polarized state and gapped states. The valley-polarized state displays conductance of nearly 4e2/h and produces contrast in a subsequent valley analyzer configuration. These results pave the way to further experiments on valley-polarized electrons in zero magnetic field.
  • Thumbnail Image
    Item
    Unconventional Hall response in the quantum limit of HfTe5
    ([London] : Nature Publishing Group UK, 2020) Galeski, S.; Zhao, X.; Wawrzyńczak, R.; Meng, T.; Förster, T.; Lozano, P.M.; Honnali, S.; Lamba, N.; Ehmcke, T.; Markou, A.; Li., Q.; Gu, G.; Zhu, W.; Wosnitza, J.; Felser, C.; Chen, G.F.; Gooth, J.
    Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three-dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe5, adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit.