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- ItemModeling Polycrystalline Electrode-electrolyte Interfaces: The Differential Capacitance(Bristol : IOP Publishing, 2020) Müller, Rüdiger; Fuhrmann, Jürgen; Landstorfer, ManuelWe present and analyze a model for polycrystalline electrode surfaces based on an improved continuum model that takes finite ion size and solvation into account. The numerical simulation of finite size facet patterns allows to study two limiting cases: While for facet size diameter dfacet →0 we get the typical capacitance of a spatially homogeneous but possible amorphous or liquid surface, in the limit 1[nm] < dfacet, an ensemble of non-interacting single crystal surfaces is approached. Already for moderate size of the facet diameters, the capacitance is remarkably well approximated by the classical approach of adding the single crystal capacities of the contributing facets weighted by their respective surface fraction. As a consequence, the potential of zero charge is not necessarily attained at a local minimum of capacitance, but might be located at a local capacitance maximum instead. Moreover, the results show that surface roughness can be accurately taken into account by multiplication of the ideally flat polycrystalline surface capacitance with a single factor. In particular, we find that the influence of the actual geometry of the facet pattern in negligible and our theory opens the way to a stochastic description of complex real polycrystal surfaces. © 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
- ItemA discussion of the cell voltage during discharge of an intercalation electrode for various C-rates based on non-equilibrium thermodynamics and numerical simulations(Bristol : IOP Publishing, 2020) Landstorfer, ManuelIn this work we discuss the modeling procedure and validation of a non-porous intercalation half-cell during galvanostatic discharge. The modeling is based on continuum thermodynamics with non-equilibrium processes in the active intercalation particle, the electrolyte, and the common interface where the intercalation reaction Li+ + e- ↔ Li occurs. The model is in detail investigated and discussed in terms of scalings of the non-equilibrium parameters, i.e. the diffusion coefficients DA and DE of the active phase and the electrolyte, conductivity sA and sE of both phases, and the exchange current density e0L, with numerical solutions of the underlying PDE system. The current density i as well as all non-equilibrium parameters are scaled s with respect to the 1-C current density iC A of the intercalation electrode. We compute then numerically the cell voltage E as function of the capacity Q and the C-rate Ch. Within a hierarchy of approximations we provide computations of E(Q) for various scalings of the diffusion coefficients, the conductivities and the exchange current density. For the later we provide finally a discussion for possible concentration dependencies. © The Author(s) 2019. Published by ECS.
- ItemIntroducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device(Weinheim : Wiley-VCH, 2020) Zheng, Yichu; Fischer, Axel; Sawatzki, Michael; Doan, Duy Hai; Liero, Matthias; Glitzky, Annegret; Reineke, Sebastian; Mannsfeld, Stefan C.B.In recent decades, organic memory devices have been researched intensely and they can, among other application scenarios, play an important role in the vision of an internet of things. Most studies concentrate on storing charges in electronic traps or nanoparticles while memory types where the information is stored in the local charge up of an integrated capacitance and presented by capacitance received far less attention. Here, a new type of programmable organic capacitive memory called p-i-n-metal-oxide-semiconductor (pinMOS) memory is demonstrated with the possibility to store multiple states. Another attractive property is that this simple, diode-based pinMOS memory can be written as well as read electrically and optically. The pinMOS memory device shows excellent repeatability, an endurance of more than 104 write-read-erase-read cycles, and currently already over 24 h retention time. The working mechanism of the pinMOS memory under dynamic and steady-state operations is investigated to identify further optimization steps. The results reveal that the pinMOS memory principle is promising as a reliable capacitive memory device for future applications in electronic and photonic circuits like in neuromorphic computing or visual memory systems. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemElectrothermal Tristability Causes Sudden Burn-In Phenomena in Organic LEDs(Weinheim : Wiley-VCH, 2021) Kirch, Anton; Fischer, Axel; Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Reineke, SebastianOrganic light-emitting diodes (OLEDs) have been established as a mature display pixel technology. While introducing the same technology in a large-area form factor to general lighting and signage applications, some key questions remain unanswered. Under high-brightness conditions, OLED panels were reported to exhibit nonlinear electrothermal behavior causing lateral brightness inhomogeneities and even regions of switched-back luminance. Also, the physical understanding of sudden device failure and burn-ins is still rudimentary. A safe and stable operation of lighting tiles, therefore, requires an in-depth understanding of these physical phenomena. Here, it is shown that the electrothermal treatment of thin-film devices allows grasping the underlying physics. Configurations of OLEDs with different lateral dimensions are studied as a role model and it is reported that devices exceeding a certain panel size develop three stable, self heating-induced operating branches. Switching between them causes the sudden formation of dark spots in devices without any preexisting inhomogeneities. A current-stabilized operation mode is commonly used in the lighting industry, as it ensures degradation-induced voltage adjustments. Here, it is demonstrated that a tristable operation always leads to destructive switching, independent of applying constant currents or voltages. With this new understanding of the effects at high operation brightness, it will be possible to adjust driving schemes accordingly, design more resilient system integrations, and develop additional failure mitigation strategies. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH