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- ItemUltrafast laser inscription of asymmetric integrated waveguide 3 dB couplers for astronomical K-band interferometry at the CHARA array(Washington, DC : Soc., 2021) Benoît, Aurélien; Pike, Fraser A.; Sharma, Tarun K.; MacLachlan, David G.; Dinkelaker, Aline N.; Nayak, Abani S.; Madhav, Kalaga; Roth, Martin M.; Labadie, Lucas; Pedretti, Ettore; Brummelaar, Theo A. ten; Scott, Nic; Coudé du Foresto, Vincent; Thomson, Robert R.We present the fabrication and characterization of 3 dB asymmetric directional couplers for the astronomical K-band at wavelengths between 2.0 and 2.4 µm. The couplers were fabricated in commercial Infrasil silica glass using an ultrafast laser operating at 1030 nm. After optimizing the fabrication parameters, the insertion losses of straight single-mode waveguides were measured to be ∼1.2±0.5dB across the full K-band. We investigate the development of asymmetric 3 dB directional couplers by varying the coupler interaction lengths and by varying the width of one of the waveguide cores to detune the propagation constants of the coupled modes. In this manner, we demonstrate that ultrafast laser inscription is capable of fabricating asymmetric 3 dB directional couplers for future applications in K-band stellar interferometry. Finally, we demonstrate that our couplers exhibit an interferometric fringe contrast of >90%. This technology paves the path for the development of a two-telescope K-band integrated optic beam combiner for interferometry to replace the existing beam combiner (MONA) in Jouvence of the Fiber Linked Unit for Recombination (JouFLU) at the Center for High Angular Resolution Astronomy (CHARA) telescope array.
- ItemLateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication(Pennington, NJ : ECS, 2023) Anand, K.; Schubert, M.A.; Corley-Wiciak, A.A.; Spirito, D.; Corley-Wiciak, C.; Klesse, W.M.; Mai, A.; Tillack, B.; Yamamoto, Y.Dislocation free local SiGe-on-insulator (SGOI) virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition. The lateral selective SiGe growth is performed around a ∼1.25 μm square Si (001) pillar in a cavity formed by HCl vapor phase etching of Si at 850 °C from side of SiO2/Si mesa structure on buried oxide. Smooth root mean square roughness of SiGe surface of 0.14 nm, which is determined by interface roughness between the sacrificially etched Si and the SiO2 cap, is obtained. Uniform Ge content of ∼40% in the laterally grown SiGe is observed. In the Si pillar, tensile strain of ∼0.65% is found which could be due to thermal expansion difference between SiO2 and Si. In the SiGe, tensile strain of ∼1.4% along 〈010〉 direction, which is higher compared to that along 〈110〉 direction, is observed. The tensile strain is induced from both [110] and [−110] directions. Threading dislocations in the SiGe are located only ∼400 nm from Si pillar and stacking faults are running towards 〈110〉 directions, resulting in the formation of a wide dislocation-free area in SiGe along 〈010〉 due to horizontal aspect ratio trapping.