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- ItemAnalysis of catalyst surface wetting: The early stage of epitaxial germanium nanowire growth(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2020) Ernst, Owen C.; Lange, Felix; Uebel, David; Teubner, Thomas; Boeck, TorstenThe dewetting process is crucial for several applications in nanotechnology. Even though not all dewetting phenomena are fully understood yet, especially regarding metallic fluids, it is clear that the formation of nanometre-sized particles, droplets, and clusters as well as their movement are strongly linked to their wetting behaviour. For this reason, the thermodynamic stability of thin metal layers (0.1-100 nm) with respect to their free energy is examined here. The decisive factor for the theoretical considerations is the interfacial energy. In order to achieve a better understanding of the interfacial interactions, three different models for estimating the interfacial energy are presented here: (i) fully theoretical, (ii) empirical, and (iii) semi-empirical models. The formation of nanometre-sized gold particles on silicon and silicon oxide substrates is investigated in detail. In addition, the strengths and weaknesses of the three models are elucidated, the different substrates used are compared, and the possibility to further process the obtained particles as nanocatalysts is verified. The importance of a persistent thin communication wetting layer between the particles and its effects on particle size and number is also clarified here. In particular, the intrinsic reduction of the Laplace pressure of the system due to material re-evaporation and Ostwald ripening describes the theoretically predicted and experimentally obtained results. Thus, dewetting phenomena of thin metal layers can be used to manufacture nanostructured devices. From this point of view, the application of gold droplets as catalysts to grow germanium nanowires on different substrates is described. © 2020 Ernst et al.
- ItemRevealing all states of dewetting of a thin gold layer on a silicon surface by nanosecond laser conditioning(Amsterdam : Elsevier, 2021) Ernst, Owen C.; Uebel, David; Kayser, Stefan; Lange, Felix; Teubner, Thomas; Boeck, TorstenDewetting is a ubiquitous phenomenon which can be applied to the laser synthesis of nanoparticles. A classical spinodal dewetting process takes place in four successive states, which differ from each other in their morphology. In this study all states are revealed by interaction of pulsed nanosecond UV laser light with thin gold layers with thicknesses between 1 nm and 10 nm on (100) silicon wafers. The specific morphologies of the dewetting states are discussed with particular emphasis on the state boundaries. The main parameter determining which state is formed is not the duration for which the gold remains liquid, but rather the input energy provided by the laser. This shows that each state transition has a separate measurable activation energy. The temperature during the nanosecond pulses and the duration during which the gold remains liquid was determined by simulation using the COMSOL Multiphysics® software package. Using these calculations, an accurate local temperature profile and its development over time was simulated. An analytical study of the morphologies and formed structures was performed using Minkowski measures. With aid of this tool, the laser induced structures were compared with thermally annealed samples, with perfectly ordered structures and with perfectly random structures. The results show that both, structures of the laser induced and the annealed samples, strongly resemble the perfectly ordered structures. This reveals a close relationship between these structures and suggests that the phenomenon under investigation is indeed a spinodal dewetting generated by an internal material wave function. The purposeful generation of these structures and the elucidation of the underlying mechanism of dewetting by short pulse lasers may assist the realisation of various technical elements such as nanowires in science and industry. © 2020
- ItemFemtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2018) Ringleb, Franziska; Andree, Stefan; Heidmann, Berit; Bonse, Jörn; Eylers, Katharina; Ernst, Owen; Boeck, Torsten; Schmid, Martina; Krüger, JörgMicro-concentrator solar cells offer an attractive way to further enhance the efficiency of planar-cell technologies while saving absorber material. Here, two laser-based bottom-up processes for the fabrication of regular arrays of CuInSe2 and Cu(In,Ga)Se2 microabsorber islands are presented, namely one approach based on nucleation and one based on laser-induced forward transfer. Additionally, a procedure for processing these microabsorbers to functioning micro solar cells connected in parallel is demonstrated. The resulting cells show up to 2.9% efficiency and a significant efficiency enhancement under concentrated illumination.
- ItemThe Electronic Conductivity of Single Crystalline Ga-Stabilized Cubic Li7La3Zr2O12: A Technologically Relevant Parameter for All-Solid-State Batteries(Weinheim : Wiley-VCH, 2020) Philipp, Martin; Gadermaier, Bernhard; Posch, Patrick; Hanzu, Ilie; Ganschow, Steffen; Meven, Martin; Rettenwander, Daniel; Redhammer, Günther J.; Wilkening, H. Martin R.The next-generation of all-solid-state lithium batteries need ceramic electrolytes with very high ionic conductivities. At the same time a negligible electronic conductivity σeon is required to eliminate self-discharge in such systems. A non-negligible electronic conductivity may also promote the unintentional formation of Li dendrites, being currently one of the key issues hindering the development of long-lasting all-solid-state batteries. This interplay is suggested recently for garnet-type Li7La3Zr2O12 (LLZO). It is, however, well known that the overall macroscopic electronic conductivity may be governed by a range of extrinsic factors such as impurities, chemical inhomogeneities, grain boundaries, morphology, and size effects. Here, advantage of Czochralski-grown single crystals, which offer the unique opportunity to evaluate intrinsic properties of a chemically homogeneous matrix, is taken to measure the electronic conductivity σeon. Via long-time, high-precision potentiostatic polarization experiments an upper limit of σeon in the order of 5 × 10−10 S cm−1 (293 K) is estimated. This value is by six orders of magnitude lower than the corresponding total conductivity σtotal = 10−3 S cm−1 of Ga-LLZO. Thus, it is concluded that the high values of σeon recently reported for similar systems do not necessarily mirror intragrain bulk properties of chemically homogenous systems but may originate from chemically inhomogeneous interfacial areas. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemREScO3 Substrates—Purveyors of Strain Engineering(Weinheim : Wiley-VCH, 2019) Klimm, Detlef; Guguschev, Christo; Ganschow, Steffen; Bickermann, Matthias; Schlom, Darrell G.The thermodynamic and crystallographic background for the development of substrate crystals that are suitable for the epitaxial deposition of biaxially strained functional perovskite layers is reviewed. In such strained layers the elastic energy delivers an additional contribution to the Gibbs free energy, which allows the tuning of physical properties and phase transition temperatures to desired values. For some oxide systems metastable phases can even be accessed. Rare-earth scandates, REScO3, are well suited as substrate crystals because they combine mechanical and chemical stability in the epitaxy process with an adjustable range of pseudo-cubic lattice parameters in the 3.95 to 4.02 Å range. To further tune the lattice parameters, chemical substitution for the RE or Sc is possible. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemSmart Design of Cz-Ge Crystal Growth Furnace and Process(Basel : MDPI, 2022) Dropka, Natasha; Tang, Xia; Chappa, Gagan Kumar; Holena, MartinThe aim of this study was to evaluate the potential of the machine learning technique of decision trees to understand the relationships among furnace design, process parameters, crystal quality, and yield in the case of the Czochralski growth of germanium. The ultimate goal was to provide the range of optimal values of 13 input parameters and the ranking of their importance in relation to their impact on three output parameters relevant to process economy and crystal quality. Training data were provided by CFD modelling. The variety of data was ensured by the Design of Experiments method. The results showed that the process parameters, particularly the pulling rate, had a substantially greater impact on the crystal quality and yield than the design parameters of the furnace hot zone. Of the latter, only the crucible size, the axial position of the side heater, and the material properties of the radiation shield were relevant.
- ItemFerroelectric Self-Poling in GeTe Films and Crystals(Basel : MDPI, 2019) Kriegner, Dominik; Springholz, Gunther; Richter, Carsten; Pilet, Nicolas; Müller, Elisabeth; Capron, Marie; Berger, Helmut; Holý, Václav; Dil, J. Hugo; Krempaský, JurajFerroelectric materials are used in actuators or sensors because of their non-volatile macroscopic electric polarization. GeTe is the simplest known diatomic ferroelectric endowed with exceedingly complex physics related to its crystalline, amorphous, thermoelectric, and—fairly recently discovered—topological properties, making the material potentially interesting for spintronics applications. Typically, ferroelectric materials possess random oriented domains that need poling to achieve macroscopic polarization. By using X-ray absorption fine structure spectroscopy complemented with anomalous diffraction and piezo-response force microscopy, we investigated the bulk ferroelectric structure of GeTe crystals and thin films. Both feature multi-domain structures in the form of oblique domains for films and domain colonies inside crystals. Despite these multi-domain structures which are expected to randomize the polarization direction, our experimental results show that at room temperature there is a preferential ferroelectric order remarkably consistent with theoretical predictions from ideal GeTe crystals. This robust self-poled state has high piezoelectricity and additional poling reveals persistent memory effects. © 2019 by the authors. Licensee MDPI, Basel, Switzerland.
- ItemNumerical Modeling of Heat Transfer and Thermal Stress at the Czochralski Growth of Neodymium Scandate Single Crystals(Weinheim : Wiley-VCH, 2021) Böttcher, Klaus; Miller, Wolfram; Ganschow, SteffenThe Czochralski growth of NdScO3 single crystals along the [110]-direction is numerically analyzed with the focus on the influence of the optical thickness on the shape of the crystal–melt interface and on the generation of thermal stresses. Due to lack of data, the optical thickness (i.e., the absorption coefficient) is varied over the entire interval between optically thin and thick. While the thermal calculation in the entire furnace is treated as axisymmetric, the stress calculation of the crystal is done three-dimensionally in order to meet the spatial anisotropy of thermal expansion and elastic coefficients. The numerically obtained values of the deflection of the crystal/melt interface meet the experimental ones for absorption coefficients in the range between 40 and 200 m−1. The maximum values of the von Mises stress appear for the case of absorption coefficient between 20 and 40 m−1. Applying absorption coefficients in the range between 3 and 100 m−1 leads to local peaks of high temperature in the shoulder region and the tail region near the end of the cylindrical part.
- ItemReal Time Predictions of VGF-GaAs Growth Dynamics by LSTM Neural Networks(Basel : MDPI, 2021) Dropka, Natasha; Ecklebe, Stefan; Holena, MartinThe aim of this study was to assess the aptitude of the recurrent Long Short-Term Memory (LSTM) neural networks for fast and accurate predictions of process dynamics in vertical-gradient-freeze growth of gallium arsenide crystals (VGF-GaAs) using datasets generated by numerical transient simulations. Real time predictions of the temperatures and solid–liquid interface position in GaAs are crucial for control applications and for process visualization, i.e., for generation of digital twins. In the reported study, an LSTM network was trained on 1950 datasets with 2 external inputs and 6 outputs. Based on network performance criteria and training results, LSTMs showed the very accurate predictions of the VGF-GaAs growth process with median root-mean-square-error (RMSE) values of 2 × 10−3. This deep learning method achieved a superior predictive accuracy and timeliness compared with more traditional Nonlinear AutoRegressive eXogenous (NARX) recurrent networks.
- ItemApplication of Artificial Neural Networks in Crystal Growth of Electronic and Opto-Electronic Materials(Basel : MDPI, 2020) Dropka, Natasha; Holena, MartinIn this review, we summarize the results concerning the application of artificial neural networks (ANNs) in the crystal growth of electronic and opto-electronic materials. The main reason for using ANNs is to detect the patterns and relationships in non-linear static and dynamic data sets which are common in crystal growth processes, all in a real time. The fast forecasting is particularly important for the process control, since common numerical simulations are slow and in situ measurements of key process parameters are not feasible. This important machine learning approach thus makes it possible to determine optimized parameters for high-quality up-scaled crystals in real time. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.