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- ItemStrain-stabilized superconductivity([London] : Nature Publishing Group UK, 2021) Ruf, J.P.; Paik, H.; Schreiber, N.J.; Nair, H.P.; Miao, L.; Kawasaki, J.K.; Nelson, J.N.; Faeth, B.D.; Lee, Y.; Goodge, B.H.; Pamuk, B.; Fennie, C.J.; Kourkoutis, L.F.; Schlom, D.G.; Shen, K.M.Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO2 thin films on (110)-oriented TiO2 substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of d orbitals.
- ItemThe multi-photon induced Fano effect([London] : Nature Publishing Group UK, 2021) Litvinenko, K.L.; Le, Nguyen H.; Redlich, B.; Pidgeon, C.R.; Abrosimov, N.V.; Andreev, Y.; Huang, Zhiming; Murdin, B.N.The ordinary Fano effect occurs in many-electron atoms and requires an autoionizing state. With such a state, photo-ionization may proceed via pathways that interfere, and the characteristic asymmetric resonance structures appear in the continuum. Here we demonstrate that Fano structure may also be induced without need of auto-ionization, by dressing the continuum with an ordinary bound state in any atom by a coupling laser. Using multi-photon processes gives complete, ultra-fast control over the interference. We show that a line-shape index q near unity (maximum asymmetry) may be produced in hydrogenic silicon donors with a relatively weak beam. Since the Fano lineshape has both constructive and destructive interference, the laser control opens the possibility of state-selective detection with enhancement on one side of resonance and invisibility on the other. We discuss a variety of atomic and molecular spectroscopies, and in the case of silicon donors we provide a calculation for a qubit readout application.
- ItemEngineering new limits to magnetostriction through metastability in iron-gallium alloys([London] : Nature Publishing Group UK, 2021) Meisenheimer, P.B.; Steinhardt, R.A.; Sung, S.H.; Williams, L.D.; Zhuang, S.; Nowakowski, M.E.; Novakov, S.; Torunbalci, M.M.; Prasad, B.; Zollner, C. J.; Wang, Z.; Dawley, N.M.; Schubert, J.; Hunter, A.H.; Manipatruni, S.; Nikonov, D.E.; Young, I.A.; Chen, L.Q.; Bokor, J.; Bhave, S.A.; Ramesh, R.; Hu, J.-M.; Kioupakis, E.; Hovden, R.; Schlom, D.G.; Heron, J.T.Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe1−xGax alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe1−xGax alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe1−xGax − [Pb(Mg1/3Nb2/3)O3]0.7−[PbTiO3]0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10−5 s m−1. When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.
- ItemWafer-scale nanofabrication of telecom single-photon emitters in silicon([London] : Nature Publishing Group UK, 2022) Hollenbach, Michael; Klingner, Nico; Jagtap, Nagesh S.; Bischoff, Lothar; Fowley, Ciarán; Kentsch, Ulrich; Hlawacek, Gregor; Erbe, Artur; Abrosimov, Nikolay V.; Helm, Manfred; Berencén, Yonder; Astakhov, Georgy V.A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
- ItemGate controlled valley polarizer in bilayer graphene([London] : Nature Publishing Group UK, 2020) Chen, Hao; Zhou, Pinjia; Liu, Jiawei; Qiao, Jiabin; Oezyilmaz, Barbaros; Martin, JensSign reversal of Berry curvature across two oppositely gated regions in bilayer graphene can give rise to counter-propagating 1D channels with opposite valley indices. Considering spin and sub-lattice degeneracy, there are four quantized conduction channels in each direction. Previous experimental work on gate-controlled valley polarizer achieved good contrast only in the presence of an external magnetic field. Yet, with increasing magnetic field the ungated regions of bilayer graphene will transit into the quantum Hall regime, limiting the applications of valley-polarized electrons. Here we present improved performance of a gate-controlled valley polarizer through optimized device geometry and stacking method. Electrical measurements show up to two orders of magnitude difference in conductance between the valley-polarized state and gapped states. The valley-polarized state displays conductance of nearly 4e2/h and produces contrast in a subsequent valley analyzer configuration. These results pave the way to further experiments on valley-polarized electrons in zero magnetic field.