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search.filters.applied.f.access: openAccess × Start date: 2020 × DDC: 530 × Publisher: Amsterdam [u.a.] : Elsevier × Subject: Silicon ×

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    Peculiarities of electronic structure and composition in ultrasound milled silicon nanowires
    (Amsterdam [u.a.] : Elsevier, 2020) Parinova, E.V.; Pisliaruk, A.K.; Schleusener, A.; Koyuda, D.A.; Chumakov, R.G.; Lebedev, A.M.; Ovsyannikov, R.; Makarova, A.; Smirnov, D.; Sivakov, V.; Turishchev, S.Yu.
    The combined X-ray absorption and emission spectroscopy approach was applied for the detailed electronic structure and composition studies of silicon nanoparticles produced by the ultrasound milling of heavily and lowly doped Si nanowires formed by metal-assisted wet chemical etching. The ultrasoft X-ray emission spectroscopy and synchrotron based X-ray absorption near edges structure spectroscopy techniques were utilize to study the valence and conduction bands electronic structure together with developed surface phase composition qualitative analysis. Our achieved results based on the implemented surface sensitive techniques strongly suggest that nanoparticles under studies show a significant presence of the silicon suboxides depending on the pre-nature of initial Si wafers. The controlled variation of the Si nanoparticles surface composition and electronic structure, including band gap engineering, can open a new prospective for a wide range Si-based nanostructures application including the integration of such structures with organic or biological systems. © 2020
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    Thermally induced evolution of the structure and optical properties of silicon nanowires
    (Amsterdam [u.a.] : Elsevier, 2020) Mussabek, Gauhar; Lysenko, Vladimir; Yermukhamed, Dana; Sivakov, Vladimir; Yu. Timoshenko, Victor
    In the present paper, we report on the investigation of thermal annealing (TA) effect on structural and optical properties of crystalline silicon nanowires produced by metal-assisted chemical etching approach. In particular, the impact of TA on nanowire length, relative volume and size distribution of voids is described in terms of Lifshitz-Slyozov-Wagner theory considering the TA induced Oswald ripening in the SiNW arrays. It was also found that TA leads to a decrease of the SiNWs total reflection in the wide UV–VIS-IR spectral range. The reported effects can be used for tuning of crystalline SiNWs arrays in view of their further applications in photonics related fields. © 2020 The Authors