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    Evidence of two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn
    ([London] : Nature Publishing Group UK, 2021) Han, Minyong; Inoue, Hisashi; Fang, Shiang; John, Caolan; Ye, Linda; Chan, Mun K.; Graf, David; Suzuki, Takehito; Ghimire, Madhav Prasad; Cho, Won Joon; Kaxiras, Efthimios; Checkelsky, Joseph G.
    The kagome lattice has long been regarded as a theoretical framework that connects lattice geometry to unusual singularities in electronic structure. Transition metal kagome compounds have been recently identified as a promising material platform to investigate the long-sought electronic flat band. Here we report the signature of a two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn by means of planar tunneling spectroscopy. Employing a Schottky heterointerface of FeSn and an n-type semiconductor Nb-doped SrTiO3, we observe an anomalous enhancement in tunneling conductance within a finite energy range of FeSn. Our first-principles calculations show this is consistent with a spin-polarized flat band localized at the ferromagnetic kagome layer at the Schottky interface. The spectroscopic capability to characterize the electronic structure of a kagome compound at a thin film heterointerface will provide a unique opportunity to probe flat band induced phenomena in an energy-resolved fashion with simultaneous electrical tuning of its properties. Furthermore, the exotic surface state discussed herein is expected to manifest as peculiar spin-orbit torque signals in heterostructure-based spintronic devices.
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    Publisher Correction: Multiple fermion scattering in the weakly coupled spin-chain compound YbAlO3 (Nature Communications, (2021), 12, 1, (3599), 10.1038/s41467-021-23585-z)
    ([London] : Nature Publishing Group UK, 2021) Nikitin, S.E.; Nishimoto, S.; Fan, Y.; Wu, J.; Wu, L.S.; Sukhanov, A.S.; Brando, M.; Pavlovskii, N.S.; Xu, J.; Vasylechko, L.; Yu, R.; Podlesnyak, A.
    [No abstract available]
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    Transport Properties and Finite Size Effects in β-Ga2O3 Thin Films
    ([London] : Macmillan Publishers Limited, part of Springer Nature, 2019) Ahrling, Robin; Boy, Johannes; Handwerg, Martin; Chiatti, Olivio; Mitdank, Rüdiger; Wagner, Günter; Galazka, Zbigniew; Fischer, Saskia F.
    Thin films of the wide band gap semiconductor β-Ga2O3 have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transport properties in thin films. The conductivities, Hall densities and mobilities in thin homoepitaxially MOVPE grown (100)-orientated β-Ga2O3 films were measured as a function of temperature and film thickness. At room temperature, the electron mobilities ((115 ± 10) cm2/Vs) in thicker films (>150 nm) are comparable to the best of bulk. However, the mobility is strongly reduced by more than two orders of magnitude with decreasing film thickness ((5.5 ± 0.5) cm2/Vs for a 28 nm thin film). We find that the commonly applied classical Fuchs-Sondheimer model does not explain sufficiently the contribution of electron scattering at the film surfaces. Instead, by applying an electron wave model by Bergmann, a contribution to the mobility suppression due to the large de Broglie wavelength in β-Ga2O3 is proposed as a limiting quantum mechanical size effect.
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    Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3
    ([London] : Macmillan Publishers Limited, part of Springer Nature, 2020) Bragaglia, V.; Ramsteiner, M.; Schick, D.; Boschker, J.E.; Mitzner, R.; Calarco, R.; Holldack, K.
    In this study we report on the investigation of epitaxially grown Sb2Te3 by employing Fourier-Transform transmission Spectroscopy (FTS) with laser-induced Coherent Synchrotron Radiation (CSR) in the Terahertz (THz) spectral range. Static spectra in the range between 20 and 120 cm−1 highlight a peculiar softening of an in-plane IR-active phonon mode upon temperature decrease, as opposed to all Raman active modes which instead show a hardening upon temperature decrease in the same energy range. The phonon mode softening is found to be accompanied by an increase of free carrier concentration. A strong coupling of the two systems (free carriers and phonons) is observed and further evidenced by exciting the same phonon mode at 62 cm−1 within an ultrafast pump-probe scheme employing a femtosecond laser as pump and a CSR single cycle THz pulse as probe. Separation of the free carrier contribution and the phonon resonance in the investigated THz range reveals that, both damping of the phonon mode and relaxation of hot carriers in the time domain happen on the same time scale of 5 ps. This relaxation is about a factor of 10 slower than expected from the Lorentz time-bandwidth limit. The results are discussed in the framework of phonon scattering at thermal and laser induced transient free carriers.
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    New magneto-polaron resonances in a monolayer of a transition metal dichalcogenide
    ([London] : Macmillan Publishers Limited, part of Springer Nature, 2023) Trallero-Giner, Carlos; Santiago-Pérez, Darío G.; Fomin, Vladimir M.
    Transition metal dichalcogenide (TMD) semiconductors are two-dimensional materials with great potential for the future of nano-optics and nano-optoelectronics as well as the rich and exciting development of basic research. The influence of an external magnetic field on a TMD monolayer raises a new question: to unveil the behavior of the magneto-polaron resonances (MPRs) associated with the phonon symmetry inherent in the system. It is shown that the renormalized Landau energy levels are modified by the interplay of the long-range Pekar–Fröhlich (PF) and short-range deformation potential (DP) interactions. This leads to a new series of MPRs involving the optical phonons at the center of the Brillouin zone. The coupling of the two Landau levels with the LO and A1 optical phonon modes provokes resonant splittings of double avoided-crossing levels giving rise to three excitation branches. This effect appears as bigger energy gaps at the anticrossing points in the renormalized Landau levels. To explore the interplay between the MPRs, the electron-phonon interactions (PF and DP) and the couplings between adjacent Landau levels, a full Green’s function treatment for the evaluation of the energy and its life-time broadening is developed. A generalization of the two-level approach is performed for the description of the new MPR branches. The obtained results are a guideline for the magneto-optical experiments in TMDs, where three MPR peaks should be observable.