Filters

2020 - 20212

More filters

2021 - 20222
Reset filters

Settings

search.filters.applied.f.access: openAccess × DDC: 540 × Type: Article × Publisher: Chichester [u.a.] : Wiley × WGL Institute: IHP ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    Raman shifts in MBE-grown SixGe1 − x − ySny alloys with large Si content
    (Chichester [u.a.] : Wiley, 2021) Schlipf, Jon; Tetzner, Henriette; Spirito, Davide; Manganelli, Costanza L.; Capellini, Giovanni; Huang, Michael R. S.; Koch, Christoph T.; Clausen, Caterina J.; Elsayed, Ahmed; Oehme, Michael; Chiussi, Stefano; Schulze, Jörg; Fischer, Inga A.
    We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germanium virtual substrate by molecular beam epitaxy. The Raman shifts of the three most prominent modes, Si–Si, Si–Ge, and Ge–Ge, are measured and compared with results in previous literature. We analyze and fit the dependence of the three modes on the composition and strain of the semiconductor alloys. We also demonstrate the calculation of the composition and strain of SixGe1 − x − ySny from the Raman shifts alone, based on the fitted relationships. Our analysis extends previous results to samples lattice matched on Ge and with higher Si content than in prior comprehensive Raman analyses, thus making Raman measurements as a local, fast, and nondestructive characterization technique accessible for a wider compositional range of these ternary alloys for silicon-based photonic and microelectronic devices.
  • Thumbnail Image
    Item
    Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis
    (Chichester [u.a.] : Wiley, 2020) Manganelli, C.L.; Virgilio, M.; Skibitzki, O.; Salvalaglio, M.; Spirito, D.; Zaumseil, P.; Yamamoto, Y.; Montanari, M.; Klesse, W.M.; Capellini, G.
    We investigate the temperature dependence of the Ge Raman mode strain–phonon coefficient in Ge/Si heteroepitaxial layers. By analyzing the temperature-dependent evolution of both the Raman Ge-Ge line and of the Ge lattice strain, we obtain a linear dependence of the strain–phonon coefficient as a function of temperature. Our findings provide an efficient method for capturing the temperature-dependent strain relaxation mechanism in heteroepitaxial systems. Furthermore, we show that the rather large variability reported in the literature for the strain–phonon coefficient values might be due to the local heating of the sample due to the excitation laser used in µ-Raman experiments. © 2020 The Authors. Journal of Raman Spectroscopy published by John Wiley & Sons Ltd