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Now showing 1 - 10 of 27
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    Graphene Q-switched Yb:KYW planar waveguide laser
    (New York, NY : American Inst. of Physics, 2015) Kim, Jun Wan; Young Choi, Sun; Aravazhi, Shanmugam; Pollnau, Markus; Griebner, Uwe; Petrov, Valentin; Bae, Sukang; Jun Ahn, Kwang; Yeom, Dong-Il; Rotermund, Fabian
    A diode-pumped Yb:KYW planar waveguide laser, single-mode Q-switched by evanescent-field interaction with graphene, is demonstrated for the first time. Few-layer graphene grown by chemical vapor deposition is transferred onto the top of a guiding layer, which initiates stable Q-switched operation in a 2.4-cm-long waveguide laser operating near 1027 nm. Average output powers up to 34 mW and pulse durations as short as 349 ns are achieved. The measured output beam profile, clearly exhibiting a single mode, agrees well with the theoretically calculated mode intensity distribution inside the waveguide. As the pump power is increased, the repetition rate and pulse energy increase from 191 to 607 kHz and from 7.4 to 58.6 nJ, respectively, whereas the pulse duration decreases from 2.09 μs to 349 ns.
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    Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect
    (Amsterdam [u.a.] : Elsevier Science, 2021) Armakavicius, Nerijus; Kühne, Philipp; Eriksson, Jens; Bouhafs, Chamseddine; Stanishev, Vallery; Ivanov, Ivan G.; Yakimova, Rositsa; Zakharov, Alexei A.; Al-Temimy, Ameer; Coletti, Camilla; Schubert, Mathias; Darakchieva, Vanya
    In this work, we demonstrate the application of terahertz-optical Hall effect (THz-OHE) to determine directionally dependent free charge carrier properties of ambient-doped monolayer and quasi-free-standing-bilayer epitaxial graphene on 4H–SiC(0001). Directionally independent free hole mobility parameters are found for the monolayer graphene. In contrast, anisotropic hole mobility parameters with a lower mobility in direction perpendicular to the SiC surface steps and higher along the steps in quasi-free-standing-bilayer graphene are determined for the first time. A combination of THz-OHE, nanoscale microscopy and optical spectroscopy techniques are used to investigate the origin of the anisotropy. Different defect densities and different number of graphene layers on the step edges and terraces are ruled out as possible causes. Scattering mechanisms related to doping variations at the step edges and terraces as a result of different interaction with the substrate and environment are discussed and also excluded. It is suggested that the step edges introduce intrinsic scattering in quasi-free-standing-bilayer graphene, that is manifested as a result of the higher ratio between mean free path and average terrace width parameters. The suggested scenario allows to reconcile existing differences in the literature regarding the anisotropic electrical transport in epitaxial graphene. © 2020 Elsevier Ltd
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    Carbon nanostructures as a multi-functional platform for sensing applications
    (Basel : MDPI AG, 2018) Mendes, R.G.; Wróbel, P.S.; Bachmatiuk, A.; Sun, J.; Gemming, T.; Liu, Z.; Rümmeli, M.H.
    The various forms of carbon nanostructures are providing extraordinary new opportunities that can revolutionize the way gas sensors, electrochemical sensors and biosensors are engineered. The great potential of carbon nanostructures as a sensing platform is exciting due to their unique electrical and chemical properties, highly scalable, biocompatible and particularly interesting due to the almost infinite possibility of functionalization with a wide variety of inorganic nanostructured materials and biomolecules. This opens a whole new pallet of specificity into sensors that can be extremely sensitive, durable and that can be incorporated into the ongoing new generation of wearable technology. Within this context, carbon-based nanostructures are amongst the most promising structures to be incorporated in a multi-functional platform for sensing. The present review discusses the various 1D, 2D and 3D carbon nanostructure forms incorporated into different sensor types as well as the novel functionalization approaches that allow such multi-functionality.
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    Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode
    (Basel : MDPI, 2018) Alvarado Chavarin, Carlos; Strobel, Carsten; Kitzmann, Julia; Di Bartolomeo, Antonio; Lukosius, Mindaugas; Albert, Matthias; Bartha, Johann Wolfgang; Wenger, Christian
    Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μS was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.
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    A size dependent evaluation of the cytotoxicity and uptake of nanographene oxide
    (London [u.a.] : RSC, 2015) Mendes, Rafael Gregorio; Koch, Britta; Bachmatiuk, Alicja; Ma, Xing; Sanchez, Samuel; Damm, Christine; Schmidt, Oliver G.; Gemming, Thomas; Eckert, Jürgen; Rümmeli, Mark H.
    Graphene oxide (GO) has attracted great interest due to its extraordinary potential for biomedical application. Although it is clear that the naturally occurring morphology of biological structures is crucial to their precise interactions and correct functioning, the geometrical aspects of nanoparticles are often ignored in the design of nanoparticles for biological applications. A few in vitro and in vivo studies have evaluated the cytotoxicity and biodistribution of GO, however very little is known about the influence of flake size and cytotoxicity. Herein, we aim at presenting an initial cytotoxicity evaluation of different nano-sized GO flakes for two different cell lines (HeLa (Kyoto) and macrophage (J7742)) when they are exposed to samples containing different sized nanographene oxide (NGO) flakes (mean diameter of 89 and 277 nm). The obtained data suggests that the larger NGO flakes reduce cell viability as compared to smaller flakes. In addition, the viability reduction correlates with the time and the concentration of the NGO nanoparticles to which the cells are exposed. Uptake studies were also conducted and the data suggests that both cell lines internalize the GO nanoparticles during the incubation periods studied.
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    In Situ Room Temperature Electron-Beam Driven Graphene Growth from Hydrocarbon Contamination in a Transmission Electron Microscope
    (Basel : MDPI, 2018-5-26) Rummeli, Mark H.; Pan, Yumo; Zhao, Liang; Gao, Jing; Ta, Huy Q.; Martinez, Ignacio G.; Mendes, Rafael G.; Gemming, Thomas; Fu, Lei; Bachmatiuk, Alicja; Liu, Zhongfan
    The excitement of graphene (as well as 2D materials in general) has generated numerous procedures for the fabrication of graphene. Here we present a mini-review on a rather less known, but attractive, in situ means to fabricate graphene inside a transmission electron microscope (TEM). This is achieved in a conventional TEM (viz. no sophisticated specimen holders or microscopes are required) and takes advantage of inherent hydrocarbon contamination as a carbon source. Both catalyst free and single atom catalyst approaches are reviewed. An advantage of this technique is that not only can the growth process be imaged in situ, but this can also be achieved with atomic resolution. Moreover, in the future, one can anticipate such approaches enabling the growth of nano-materials with atomic precision.
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    Graphene mode-locked Tm,Ho-codoped crystalline garnet laser producing 70-fs pulses near 21 µm
    (Washington, DC : OSA, 2019) Zhao, Yongguang; Chen, Weidong; Wang, Li; Wang, Yicheng; Pan, Zhongben; Dai, Xiaojun; Yuan, Hualei; Cai, Huaqiang; Zhang, Yan; Bae, Ji Eun; Park, Tae Gwan; Rotermund, Fabian; Loiko, Pavel; Serres, Josep Maria; Mateos, Xavier; Shen, Deyuan; Griebner, Uwe; Petrov, Valentin
    Bilayer graphene synthesized by chemical vapor deposition is successfully applied as a saturable absorber (SA) for the passive mode-locking of a Tm,Ho:CLNGG laser at 2093nm. Near transform-limited pulses as short as 70 fs, i.e., 10 optical cycles, are produced at a 89 MHz repetition rate with 69 mW average output power. To the best of our knowledge, these are the shortest pulses ever reported from graphene-SA mode-locked Tm, or Ho-lasers in the 2 µm spectral region, including bulk and fiber lasers.
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    Formation of intermittent covalent bonds at high contact pressure limits superlow friction on epitaxial graphene
    (College Park, MD : APS, 2023) Szczefanowicz, Bartosz; Kuwahara, Takuya; Filleter, Tobin; Klemenz, Andreas; Mayrhofer, Leonhard; Bennewitz, Roland; Moseler, Michael
    Epitaxial graphene on SiC(0001) exhibits superlow friction due to its weak out-of-plane interactions. Friction-force microscopy with silicon tips shows an abrupt increase of friction by one order of magnitude above a threshold normal force. Density-functional tight-binding simulations suggest that this wearless high-friction regime involves an intermittent sp3 rehybridization of graphene at contact pressure exceeding 10 GPa. The simultaneous formation of covalent bonds with the tip's silica surface and the underlying SiC interface layer establishes a third mechanism limiting the superlow friction on epitaxial graphene, in addition to dissipation in elastic instabilities and in wear processes.
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    Control of etch pit formation for epitaxial growth of graphene on germanium
    (Melville, NY : American Inst. of Physics, 2019) Becker, Andreas; Wenger, Christian; Dabrowski, Jarek
    Graphene epitaxy on germanium by chemical vapor deposition is a promising approach to integrate graphene into microelectronics, but the synthesis is still accompanied by several challenges such as the high process temperature, the reproducibility of growth, and the formation of etch pits during the process. We show that the substrate cleaning by preannealing in molecular hydrogen, which is crucial to successful and reproducible graphene growth, requires a high temperature and dose. During both substrate cleaning and graphene growth, etch pits can develop under certain conditions and disrupt the synthesis process. We explain the mechanisms how these etch pits may form by preferential evaporation of substrate, how substrate topography is related to the state of the cleaning process, and how etch pit formation during graphene growth can be controlled by choice of a sufficiently high precursor flow. Our study explains how graphene can be grown reliably on germanium at high temperature and thereby lays the foundation for further optimization of the growth process. © 2019 Author(s).
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    Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density
    (London : Nature Publishing Group, 2015) Son, In Hyuk; Park, Jong Hwan; Kwon, Soonchul; Park, Seongyong; Rümmeli, Mark H.; Bachmatiuk, Alicja; Song, Hyun Jae; Ku, Junhwan; Choi, Jang Wook; Choi, Jae-man; Doo, Seok-Gwang; Chang, Hyuk
    Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge–discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l−1 at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology.