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search.filters.applied.f.access: openAccess × Subject: Near-infrared spectroscopy ×

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    High-Resolution Arrayed-Waveguide-Gratings in Astronomy: Design and Fabrication Challenges
    (Basel : MDPI, 2017) Stoll, Andreas; Zhang, Ziyang; Haynes, Roger; Roth, Martin
    A comprehensive design of a folded-architecture arrayed-waveguide-grating (AWG)-device, targeted at applications as integrated photonic spectrographs (IPS) in near-infrared astronomy, is presented. The AWG structure is designed for the astronomical H-band (1500 nm-1800 nm) with a theoretical maximum resolving power R = 60,000 at 1630 nm. The geometry of the device is optimized for a compact structure with a footprint of 5.5 cm × 3.93 cm on SiO2 platform. To evaluate the fabrication challenges of such high-resolution AWGs, effects of random perturbations of the effective refractive index (RI) distribution in the free propagation region (FPR), as well as small variations of the array waveguide optical lengths are numerically investigated. The results of the investigation show a dramatic degradation of the point spread function (PSF) for a random effective RI distribution with variance values above ~10-4 for both the FPR and the waveguide array. Based on the results, requirements on the fabrication technology for high-resolution AWG-based spectrographs are given in the end.
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    Far-infrared and Raman spectroscopy investigation of phonon modes in amorphous and crystalline epitaxial GeTe-Sb2Te3 alloys
    (London : Nature Publishing Group, 2016) Bragaglia, V.; Holldack, K.; Boschker, J.E.; Arciprete, F.; Zallo, E.; Flissikowski, T.; Calarco, R.
    A combination of far-infrared and Raman spectroscopy is employed to investigate vibrational modes and the carrier behavior in amorphous and crystalline ordered GeTe-Sb2Te3 alloys (GST) epitaxially grown on Si(111). The infrared active GST mode is not observed in the Raman spectra and vice versa, indication of the fact that inversion symmetry is preserved in the metastable cubic phase in accordance with the Fm3 space group. For the trigonal phase, instead, a partial symmetry break due to Ge/Sb mixed anion layers is observed. By studying the crystallization process upon annealing with both the techniques, we identify temperature regions corresponding to the occurrence of different phases as well as the transition from one phase to the next. Activation energies of 0.43 eV and 0.08 eV for the electron conduction are obtained for both cubic and trigonal phases, respectively. In addition a metal-insulator transition is clearly identified to occur at the onset of the transition between the disordered and the ordered cubic phase.