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search.filters.applied.f.access: openAccess × Subject: nanoelectronics ×

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    Wavelength-stabilized ns-pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions
    (Stevenage : IET, 2022) Ammouri, Nor; Christopher, Heike; Fricke, Jörg; Ginolas, Arnim; Liero, Armin; Maaßdorf, Andre; Wenzel, Hans; Knigge, Andrea
    The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture of 50 µm) emits an optical power of 2.2 kW in 8 ns long pulses at an injection current of 1.1 kA. This corresponds to an almost threefold increase of the pulse power compared to a bar with lasers having only a single active region. Due to the integrated surface Bragg grating, the bar exhibits a narrow spectral bandwidth of about 0.3 nm and a thermal tuning of only 68 pm/K.
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    Casting of Gold Nanoparticles with High Aspect Ratios inside DNA Molds
    (Weinheim : Wiley-VCH, 2020) Ye, Jingjing; Weichelt, Richard; Kemper, Ulrich; Gupta, Vaibhav; König, Tobias A.F.; Eychmüller, Alexander; Seidel, Ralf
    DNA nanostructures provide a powerful platform for the programmable assembly of nanomaterials. Here this approach is extended to synthesize rod-like gold nanoparticles in a full DNA controlled manner. The approach is based on DNA molds containing elongated cavities. Gold is deposited inside the molds using a seeded-growth procedure. By carefully exploring the growth parameters it is shown that gold nanostructures with aspect ratios of up to 7 can be grown from single seeds. The highly anisotropic growth is in this case controlled only by the rather soft and porous DNA walls. The optimized seeded growth procedure provides a robust and simple routine to achieve continuous gold nanostructures using DNA templating.
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    Modeling and simulation of strained quantum wells in semiconductorlasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2000) Bandelow, Uwe; Kaiser, Hans-Christoph; Koprucki, Thomas; Rehberg, Joachim
    A model allowing for efficiently obtaining band structure information on semiconductor Quantum Well structures will be demonstrated which is based on matrix-valued kp-Schrödinger operators. Effects such as confinement, band mixing, spin-orbit interaction and strain can be treated consistently. The impact of prominent Coulomb effects can be calculated by including the Hartree interaction via the Poisson equation and the bandgap renormalization via exchange-correlation potentials, resulting in generalized (matrix-valued) Schrödinger-Poisson systems. Band structure information enters via densities and the optical response function into comprehensive simulations of Multi Quantum Well lasers. These device simulations yield valuable information on device characteristics, including effects of carrier transport, waveguiding and heating and can be used for optimization.