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- ItemWafer-scale nanofabrication of telecom single-photon emitters in silicon([London] : Nature Publishing Group UK, 2022) Hollenbach, Michael; Klingner, Nico; Jagtap, Nagesh S.; Bischoff, Lothar; Fowley, Ciarán; Kentsch, Ulrich; Hlawacek, Gregor; Erbe, Artur; Abrosimov, Nikolay V.; Helm, Manfred; Berencén, Yonder; Astakhov, Georgy V.A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
- ItemAuthor Correction: Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe (npj Quantum Information, (2020), 6, 1, (40), 10.1038/s41534-020-0276-2)(London : Nature Publ. Group, 2020) Struck, Tom; Hollmann, Arne; Schauer, Floyd; Fedorets, Olexiy; Schmidbauer, Andreas; Sawano, Kentarou; Riemann, Helge; Abrosimov, Nikolay V.; Cywiński, Łukasz; Bougeard, Dominique; Schreiber, Lars R.The original version of this Article omitted the following from the Acknowledgements: “This work has also been funded by the National Science Centre, Poland under QuantERA program, Grant No. 2017/25/Z/ST3/03044.” This has now been corrected in both the PDF and HTML versions of the Article. © 2020, The Author(s).
- ItemLow-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe(London : Nature Publ. Group, 2020) Struck, Tom; Hollmann, Arne; Schauer, Floyd; Fedorets, Olexiy; Schmidbauer, Andreas; Sawano, Kentarou; Riemann, Helge; Abrosimov, Nikolay V.; Cywiński, Łukasz; Bougeard, Dominique; Schreiber, Lars R.We identify the dominant source for low-frequency spin qubit splitting noise in a highly isotopically-purified silicon device with an embedded nanomagnet and a spin echo decay time T2echo = 128 µs. The power spectral density (PSD) of the charge noise explains both, the clear transition from a 1/f2- to a 1/f-dependence of the splitting noise PSD as well as the experimental observation of a decreasing time-ensemble spin dephasing time, from T2*˜ 20 µs, with increasing measurement time over several hours. Despite their strong hyperfine contact interaction, the few 73Ge nuclei overlapping with the quantum dot in the barrier do not limit T2*, likely because their dynamics is frozen on a few hours measurement scale. We conclude that charge noise and the design of the gradient magnetic field are the key to further improve the qubit fidelity in isotopically purified 28Si/SiGe. © 2020, The Author(s).
- ItemIndium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps(Weinheim : Wiley-VCH, 2021) De Guzman, Joyce Ann T.; Markevich, Vladimir P.; Hawkins, Ian D.; Ayedh, Hussein M.; Coutinho, José; Binns, Jeff; Falster, Robert; Abrosimov, Nikolay V.; Crowe, Iain F.; Halsall, Matthew P.; Peaker, Anthony R.Indium-doped silicon is considered a possible p-type material for solar cells to avoid light-induced degradation (LID), which occurs in cells made from boron-doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium-related LID are examined and a deep donor is detected, which is attributed to a negative-U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron-doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first-principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties.
- ItemElectronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon(Weinheim : Wiley-VCH, 2021-9-17) De Guzman, Joyce Ann T.; Markevich, Vladimir P.; Coutinho, José; Abrosimov, Nikolay V.; Halsall, Matthew P.; Peaker, Anthony R.The subject of hydrogen–boron interactions in crystalline silicon is revisited with reference to light and elevated temperature-induced degradation (LeTID) in boron-doped solar silicon. Ab initio modeling of structure, binding energy, and electronic properties of complexes incorporating a substitutional boron and one or two hydrogen atoms is performed. From the calculations, it is confirmed that a BH pair is electrically inert. It is found that boron can bind two H atoms. The resulting BH2 complex is a donor with a transition level estimated at E c–0.24 eV. Experimentally, the electrically active defects in n-type Czochralski-grown Si crystals co-doped with phosphorus and boron, into which hydrogen is introduced by different methods, are investigated using junction capacitance techniques. In the deep-level transient spectroscopy (DLTS) spectra of hydrogenated Si:P + B crystals subjected to heat-treatments at 100 °C under reverse bias, an electron emission signal with an activation energy of ≈0.175 eV is detected. The trap is a donor with electronic properties close to those predicted for boron–dihydrogen. The donor character of BH2 suggests that it can be a very efficient recombination center of minority carriers in B-doped p-type Si crystals. A sequence of boron–hydrogen reactions, which can be related to the LeTID effect in Si:B is proposed.