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Author: Abrosimov, Nikolay V. × Version: publishedVersion × Publisher: London : Nature Publ. Group ×

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    Author Correction: Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe (npj Quantum Information, (2020), 6, 1, (40), 10.1038/s41534-020-0276-2)
    (London : Nature Publ. Group, 2020) Struck, Tom; Hollmann, Arne; Schauer, Floyd; Fedorets, Olexiy; Schmidbauer, Andreas; Sawano, Kentarou; Riemann, Helge; Abrosimov, Nikolay V.; Cywiński, Łukasz; Bougeard, Dominique; Schreiber, Lars R.
    The original version of this Article omitted the following from the Acknowledgements: “This work has also been funded by the National Science Centre, Poland under QuantERA program, Grant No. 2017/25/Z/ST3/03044.” This has now been corrected in both the PDF and HTML versions of the Article. © 2020, The Author(s).
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    Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe
    (London : Nature Publ. Group, 2020) Struck, Tom; Hollmann, Arne; Schauer, Floyd; Fedorets, Olexiy; Schmidbauer, Andreas; Sawano, Kentarou; Riemann, Helge; Abrosimov, Nikolay V.; Cywiński, Łukasz; Bougeard, Dominique; Schreiber, Lars R.
    We identify the dominant source for low-frequency spin qubit splitting noise in a highly isotopically-purified silicon device with an embedded nanomagnet and a spin echo decay time T2echo = 128 µs. The power spectral density (PSD) of the charge noise explains both, the clear transition from a 1/f2- to a 1/f-dependence of the splitting noise PSD as well as the experimental observation of a decreasing time-ensemble spin dephasing time, from T2*˜ 20 µs, with increasing measurement time over several hours. Despite their strong hyperfine contact interaction, the few 73Ge nuclei overlapping with the quantum dot in the barrier do not limit T2*, likely because their dynamics is frozen on a few hours measurement scale. We conclude that charge noise and the design of the gradient magnetic field are the key to further improve the qubit fidelity in isotopically purified 28Si/SiGe. © 2020, The Author(s).