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- ItemOperando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy(London [u.a.] : Taylor & Francis, 2019) Niu, Gang; Calka, Pauline; Huang, Peng; Sharath, Sankaramangalam Ulhas; Petzold, Stefan; Gloskovskii, Andrei; Fröhlich, Karol; Zhao, Yudi; Kan, Jinfeng; Schubert, Markus Andreas; Bärwolf, Florian; Ren, Wei; Ye, Zuo-Guang; Perez, Eduardo; Wenger, Christian; Alff, Lambert; Schroeder, ThomasThe HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices. IMPACT STATEMENT: The oxygen ‘breathing’ behavior at the oxide/metal interface of filament-type resistive random access memory devices is operandoly detected using hard X-ray photoelectron spectroscopy as a diagnostic tool. © 2019, © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.