2016, Rinaldi, C., Rojas-Sánchez, J.C., Wang, R.N., Fu, Y., Oyarzun, S., Vila, L., Bertoli, S., Asa, M., Baldrati, L., Cantoni, M., George, J.-M., Calarco, R., Fert, A., Bertacco, R.

GeTe has been predicted to be the father compound of a new class of multifunctional materials, ferroelectric Rashba semiconductors, displaying a coupling between spin-dependent k-splitting and ferroelectricity. In this paper, we report on epitaxial Fe/GeTe(111) heterostructures grown by molecular beam epitaxy. Spin-pumping experiments have been performed in a radio-frequency cavity by pumping a spin current from the Fe layer into GeTe at the Fe ferromagnetic resonance and detecting the transverse charge current originated in the slab due to spin-to-charge conversion. Preliminary experiments indicate that a clear spin to charge conversion exists, thus unveiling the potential of GeTe for spin-orbitronics.