2016, Hnida, K.E., Bäßler, S., Mech, J., Szaciłowski, K., Socha, R.P., Gajewska, M., Nielsch, K., Przybylski, M., Sulka, G.D.

We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).

2019, Hnida, K.E., Bäßler, S., Mech, J., Szaciłowski, K., Socha, R.P., Gajewska, M., Nielsch, K., Przybylski, M., Sulka, G.D.

There was an error in eqn (3) which was reproduced from the literature and used for the interpretation of the results. The calculations (using the equations from an original work from 1987) were done according the correct version of eqn (3) presented below:. (Table Presented). © 2019 The Royal Society of Chemistry.