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Author: Bärwolf, Florian ×

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    Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
    (London [u.a.] : Taylor & Francis, 2019) Niu, Gang; Calka, Pauline; Huang, Peng; Sharath, Sankaramangalam Ulhas; Petzold, Stefan; Gloskovskii, Andrei; Fröhlich, Karol; Zhao, Yudi; Kan, Jinfeng; Schubert, Markus Andreas; Bärwolf, Florian; Ren, Wei; Ye, Zuo-Guang; Perez, Eduardo; Wenger, Christian; Alff, Lambert; Schroeder, Thomas
    The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices. IMPACT STATEMENT: The oxygen ‘breathing’ behavior at the oxide/metal interface of filament-type resistive random access memory devices is operandoly detected using hard X-ray photoelectron spectroscopy as a diagnostic tool. © 2019, © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.
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    Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes
    (London : Nature Publishing Group, 2015) You, Tiangui; Ou, Xin; Niu, Gang; Bärwolf, Florian; Li, Guodong; Du, Nan; Bürger, Danilo; Skorupa, Ilona; Jia, Qi; Yu, Wenjie; Wang, Xi; Schmidt, Oliver G.; Schmidt, Heidemarie
    BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO3 thin film growth Ti diffuses into the BiFeO3 layer. The diffused Ti effectively traps and releases oxygen vacancies and consequently stabilizes the resistive switching in BiFeO3 MIM structures. Therefore, using Ti implantation of the bottom electrode, the retention performance can be greatly improved with increasing Ti fluence. For the used raster-scanned Ti implantation the lateral Ti distribution is not homogeneous enough and endurance slightly degrades with Ti fluence. The local resistive switching investigated by current sensing atomic force microscopy suggests the capability of down-scaling the resistive switching cell to one BiFeO3 grain size by local Ti implantation of the bottom electrode.