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Author: Büchner, B. × Author: Isaeva, A. × Type: article × Subject: Electronic structure ×

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    Two-dimensional ferromagnetic extension of a topological insulator
    (College Park, MD : APS, 2023) Kagerer, P.; Fornari, C. I.; Buchberger, S.; Tschirner, T.; Veyrat, L.; Kamp, M.; Tcakaev, A. V.; Zabolotnyy, V.; Morelhão, S. L.; Geldiyev, B.; Müller, S.; Fedorov, A.; Rienks, E.; Gargiani, P.; Valvidares, M.; Folkers, L. C.; Isaeva, A.; Büchner, B.; Hinkov, V.; Claessen, R.; Bentmann, H.; Reinert, F.
    Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a three-dimensional (3D) topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface, as through proximity of a ferromagnetic (FM) layer. However, experimental evidence of such a proximity-induced Dirac mass gap is missing, likely due to an insufficient overlap of TSS and the FM subsystem. Here, we take a different approach, namely ferromagnetic extension (FME), using a thin film of the 3D TI Bi2Te3, interfaced with a monolayer of the lattice-matched van der Waals ferromagnet MnBi2Te4. Robust 2D ferromagnetism with out-of-plane anisotropy and a critical temperature of Tc≈15 K is demonstrated by x-ray magnetic dichroism and electrical transport measurements. Using angle-resolved photoelectron spectroscopy, we observe the opening of a sizable magnetic gap in the 2D FM phase, while the surface remains gapless in the paramagnetic phase above Tc. Ferromagnetic extension paves the way to explore the interplay of strictly 2D magnetism and topological surface states, providing perspectives for realizing robust quantum anomalous Hall and chiral Majorana states.
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    Topological Electronic Structure and Intrinsic Magnetization in MnBi4Te7: A Bi2Te3 Derivative with a Periodic Mn Sublattice
    (College Park, MD : American Physical Society, 2019) Vidal, R.C.; Zeugner, A.; Facio, J.I.; Ray, R.; Haghighi, M.H.; Wolter, A.U.B.; Corredor, Bohorquez, L.T.; Caglieris, F.; Moser, S.; Figgemeier, T.; Peixoto, T.R.F.; Vasili, H.B.; Valvidares, M.; Jung, S.; Cacho, C.; Alfonsov, A.; Mehlawat, K.; Kataev, V.; Hess, C.; Richter, M.; Büchner, B.; Van Den Brink, J.; Ruck, M.; Reinert, F.; Bentmann, H.; Isaeva, A.
    Combinations of nontrivial band topology and long-range magnetic order hold promise for realizations of novel spintronic phenomena, such as the quantum anomalous Hall effect and the topological magnetoelectric effect. Following theoretical advances, material candidates are emerging. Yet, so far a compound that combines a band-inverted electronic structure with an intrinsic net magnetization remains unrealized. MnBi2Te4 has been established as the first antiferromagnetic topological insulator and constitutes the progenitor of a modular (Bi2Te3)n(MnBi2Te4) series. Here, for n=1, we confirm a nonstoichiometric composition proximate to MnBi4Te7. We establish an antiferromagnetic state below 13 K followed by a state with a net magnetization and ferromagnetic-like hysteresis below 5 K. Angle-resolved photoemission experiments and density-functional calculations reveal a topologically nontrivial surface state on the MnBi4Te7(0001) surface, analogous to the nonmagnetic parent compound Bi2Te3. Our results establish MnBi4Te7 as the first band-inverted compound with intrinsic net magnetization providing a versatile platform for the realization of magnetic topological states of matter.