2 results
Search Results
Now showing 1 - 2 of 2
- ItemResistive switching in polycrystalline YMnO3 thin films(New York, NY : American Inst. of Physics, 2014) Bogusz, A.; Müller, A.D.; Blaschke, D.; Skorupa, I.; Bürger, D.; Scholz, A.; Schmidt, O.G.; Schmidt, H.We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.
- ItemTransport in ZnCoO thin films with stable bound magnetic polarons(New York, NY : American Inst. of Physics, 2014) Kaspar, T.; Fiedler, J.; Skorupa, I.; Bürger, D.; Schmidt, O.G.; Schmidt, H.Diluted magnetic ZnCoO films with 5 at.% Co have been fabricated by pulsed laser deposition on c-plane sapphire substrates and Schottky and Ohmic contacts have been prepared in top-top configuration. The diode current is significantly reduced after the diode has been subjected to an external magnetic field. In the reverse bias range the corresponding positive magnetoresistance is persistent and amounts to more than 1800% (50 K), 240% (30 K), and 50% (5 K). This huge magnetoresistance can be attributed to the large internal magnetic field in depleted ZnCoO with ferromagnetic exchange between stable bound magnetic polarons.