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    Advances and Trends in Chemically Doped Graphene
    (Weinheim : Wiley-VCH, 2020) Ullah, Sami; Shi, Qitao; Zhou, Junhua; Yang, Xiaoqin; Ta, Huy Q.; Hasan, Maria; Ahmad, Nasir Mahmood; Fu, Lei; Bachmatiuk, Alicja; Rümmeli, Mark H.
    Chemically doped graphene materials are fascinating because these have different desirable attributes with possible synergy. The inert and gapless nature of graphene can be changed by adding a small number of heteroatoms to substitute carbon in the lattice. The doped material may display superior catalytic activities; durable, fast, and selective sensing; improved magnetic moments; photoresponses; and activity in chemical reactions. In the current review, recent advances are covered in chemically doped graphene. First, the different types of heteroatoms, their bonding configurations, and briefly their properties are discussed. This is followed by the description of various synthesis and analytical methods essential for assessing the characteristics of heterographene with specific focus on the selected graphene materials of different dopants (particularly, single dopants, including N, B, S, P, first three halogens, Ge, and Ga, and codopants, such as N/O), and more importantly, up-to-date applications enabled by the intentional doping. Finally, outlook and perspectives section review the existing challenges, future opportunities, and possible ways to improve the graphitic materials. The goal is to update and inspire the readers to establish novel doped graphene with valuable properties and for current and futuristic applications. © 2020 The Authors. Published by Wiley-VCH GmbH
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    Facile production of ultra-fine silicon nanoparticles
    (London : Royal Society Publishing, 2020) Tokarska, Klaudia; Shi, Qitao; Otulakowski, Lukasz; Wrobel, Pawel; Ta, Huy Quang; Kurtyka, Przemyslaw; Kordyka, Aleksandra; Siwy, Mariola; Vasylieva, Margaryta; Forys, Aleksander; Trzebick, Barbara; Bachmatiuk, Alicja; Rümmeli, Mark H.
    A facile procedure for the synthesis of ultra-fine silicon nanoparticles without the need for a Schlenk vacuum line is presented. The process consists of the production of a (HSiO1.5)n sol–gel precursor based on the polycondensation of low-cost trichlorosilane (HSiCl3), followed by its annealing and etching. The obtained materials were thoroughly characterized after each preparation step by electron microscopy, Fourier transform and Raman spectroscopy, X-ray dispersion spectroscopy, diffraction methods and photoluminescence spectroscopy. The data confirm the formation of ultra-fine silicon nanoparticles with controllable average diameters between 1 and 5 nm depending on the etching time.