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- ItemCurrent State-of-the-Art in the Interface/Surface Modification of Thermoelectric Materials(Weinheim : Wiley-VCH, 2021) He, Shiyang; Lehmann, Sebastian; Bahrami, Amin; Nielsch, KorneliusThermoelectric (TE) materials are prominent candidates for energy converting applications due to their excellent performance and reliability. Extensive efforts for improving their efficiency in single-/multi-phase composites comprising nano/micro-scale second phases are being made. The artificial decoration of second phases into the thermoelectric matrix in multi-phase composites, which is distinguished from the second-phase precipitation occurring during the thermally equilibrated synthesis of TE materials, can effectively enhance their performance. Theoretically, the interfacial manipulation of phase boundaries can be extended to a wide range of materials. High interface densities decrease thermal conductivity when nano/micro-scale grain boundaries are obtained and certain electronic structure modifications may increase the power factor of TE materials. Based on the distribution of second phases on the interface boundaries, the strategies can be divided into discontinuous and continuous interfacial modifications. The discontinuous interfacial modifications section in this review discusses five parts chosen according to their dispersion forms, including metals, oxides, semiconductors, carbonic compounds, and MXenes. Alternatively, gas- and solution-phase process techniques are adopted for realizing continuous surface changes, like the core–shell structure. This review offers a detailed analysis of the current state-of-the-art in the field, while identifying possibilities and obstacles for improving the performance of TE materials.
- ItemEncapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors(Melville, NY : American Inst. of Physics, 2022) Yang, Jun; Bahrami, Amin; Ding, Xingwei; Lehmann, Sebastian; Nielsch, KorneliusTransparent conductive electrodes are essential in the application of flexible electronics. In this work, we successfully demonstrated a novel strategy for improving mechanical/electrical properties of indium tin oxide (ITO)-free flexible silver nanowire (Ag NW) thin films. To reduce the contact resistance of Ag NWs, an ethanol-mist was used to weld the cross junction of wires at room temperature. The nano-welded Ag NWs (W-Ag NWs) were then coated with an aluminum-doped ZnO (AZO) solution, which significantly reduce the roughness of the Ag NW thin film. Finally, an ultrathin SbOx thin film of 2 nm was deposited on the film surface using a water-free low-temperature atomic layer deposition technique to protect the W-Ag NW/AZO layer from water or oxygen degradation. The treated Ag NWs have a high transmittance of 87% and a low sheet resistance of about 15 ω/sq, which is comparable with the ITO electrode's property. After 1000 cycles of bending testing, the W-Ag NW/AZO/SbOx film practically retains its initial conductivity. Furthermore, the samples were immersed in a solution with pH values ranging from 3 to 13 for 5 min. When compared to untreated Ag NWs or those coated with AlOx thin films, W-Ag NW/AZO/SbOx had superior electrical stability. The W-Ag NW/AZO/SbOxlayer was integrated as a gate electrode on low-power operating flexible Ti-ZnO thin film transistors (TFTs). The 5% Ti-ZnO TFT has a field-effect mobility of 19.7 cm2 V s-1, an Ion/Ioff ratio of 107, and a subthreshold swing of 147 mV decade-1.