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- ItemSemiconductor laser linewidth theory revisited(Basel : MDPI, 2021) Wenzel, Hans; Kantner, Markus; Radziunas, Mindaugas; Bandelow, UweMore and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical understanding of the root causes limiting the linewidth is therefore of great practical relevance. In this paper, we derive a general expression for the calculation of the spectral linewidth step by step in a self-contained manner. We build on the linewidth theory developed in the 1980s and 1990s but look from a modern perspective, in the sense that we choose as our starting points the time-dependent coupled-wave equations for the forward and backward propagating fields and an expansion of the fields in terms of the stationary longitudinal modes of the open cavity. As a result, we obtain rather general expressions for the longitudinal excess factor of spontaneous emission (K-factor) and the effective α-factor including the effects of nonlinear gain (gain compression) and refractive index (Kerr effect), gain dispersion, and longitudinal spatial hole burning in multi-section cavity structures. The effect of linewidth narrowing due to feedback from an external cavity often described by the so-called chirp reduction factor is also automatically included. We propose a new analytical formula for the dependence of the spontaneous emission on the carrier density avoiding the use of the population inversion factor. The presented theoretical framework is applied to a numerical study of a two-section distributed Bragg reflector laser.
- ItemImproving the modulation bandwidth in semiconductor lasers by passive feedback(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2006) Radziunas, Mindaugas; Glitzky, Annegret; Bandelow, Uwe; Wolfrum, Matthias; Troppenz, Ute; Kreissl, Jochen; Rehbein, WolfgangWe explore the concept of passive-feedback lasers for direct signal modulation at 40 Gbit/s. Based on numerical simulation and bifurcation analysis, we explain the main mechanisms in these devices which are crucial for modulation at high speed. The predicted effects are demonstrated experimentally by means of correspondingly designed devices. In particular a significant improvement of the modulation bandwidth at low injection currents can be demonstrated.
- ItemAdditive splitting methods for parallel solution of evolution problems(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Amiranashvili, Shalva; Radziunas, Mindaugas; Bandelow, Uwe; Busch, Kurt; Čiegis, RaimondasWe demonstrate how a multiplicative splitting method of order P can be used to construct an additive splitting method of order P + 3. The weight coefficients of the additive method depend only on P, which must be an odd number. Specifically we discuss a fourth-order additive method, which is yielded by the Lie-Trotter splitting. We provide error estimates, stability analysis, and numerical examples with the special discussion of the parallelization properties and applications to nonlinear optics.
- ItemAmplifications of picosecond laser pulses in tapered semiconductor amplifiers : numerical simulations versus experiments(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2011) Tronciu, Vasile; Schwertfeger, Sven; Radziunas, Mindaugas; Klehr, Andreas; Bandelow, Uwe; Wenzel, HansWe apply a travelling wave model to the simulation of the amplification of laser pulses generated by Q-switched or mode-locked distributed-Bragg reflector lasers. The power amplifier monolithically integrates a ridge-waveguide section acting as pre-amplifier and a flared gain-region amplifier. The diffraction limited and spectral-narrow band pulses injected in to the pre-amplifier have durations between 10 ps and 100 ps and a peak power of typical 1 W. After the amplifier, the pulses reach a peak power of several tens of Watts preserving the spatial, spectral and temporal properties of the input pulse. We report results obtained by a numerical solution of the travelling-wave equations and compare them with experimental investigations. The peak powers obtained experimentally are in good agreement with the theoretical predictions. The performance of the power amplifier is evaluated by considering the dependence of the pulse energy as a function of different device and material parameters.
- ItemMode transitions in distributed-feedback tapered master-oscillator power-amplifier(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2008) Radziunas, Mindaugas; Tronciu, Vasile Z.; Bandelow, Uwe; Lichtner, Mark; Spreemann, Martin; Wenzel, HansTheoretical and experimental investigations have been carried out to study the spectral and spatial behavior of monolithically integrated distributed-feedback tapered master-oscillators power-amplifiers emitting around 973 nm. Introduction of self and cross heating effects and the analysis of longitudinal optical modes allows us to explain experimental results. The results show a good qualitative agreement between measured and calculated characteristics.
- ItemTime-dependent simulation of thermal lensing in high-power broad-area semiconductor lasers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Zeghuzi, Anissa; Wünsche, Hans-Jürgen; Wenzel, Hans; Radziunas, Mindaugas; Fuhrmann, Jürgen; Klehr, Andreas; Bandelow, Uwe; Knigge, AndreaWe propose a physically realistic and yet numerically applicable thermal model to account for short and long term self-heating within broad-area lasers. Although the temperature increase is small under pulsed operation, a waveguide that is formed within a few-ns-long pulse can result in a transition from a gain-guided to an index-guided structure, leading to near and far field narrowing. Under continuous wave operation the longitudinally varying temperature profile is obtained self-consistently. The resulting unfavorable narrowing of the near field can be successfully counteracted by etching trenches.
- ItemEfficient coupling of electro-optical and heat-transport models for broad-area semiconductor lasers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Radziunas, Mindaugas; Fuhrmann, Jürgen; Zeghuzi, Anissa; Wünsche, Hans-Jürgen; Koprucki, Thomas; Brée, Carsten; Wenzel, Hans; Bandelow, UweIn this work, we discuss the modeling of edge-emitting high-power broad-area semiconductor lasers. We demonstrate an efficient iterative coupling of a slow heat transport (HT) model defined on multiple vertical-lateral laser cross-sections with a fast dynamic electro-optical (EO) model determined on the longitudinal-lateral domain that is a projection of the device to the active region of the laser. Whereas the HT-solver calculates temperature and thermally-induced refractive index changes, the EO-solver exploits these distributions and provides time-averaged field intensities, quasi-Fermi potentials, and carrier densities. All these time-averaged distributions are used repetitively by the HT-solver for the generation of the heat sources entering the HT problem solved in the next iteration step.
- ItemTraveling wave analysis of non-thermal far-field blooming in high-power broad-area lasers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Zeghuzi, Anissa; Radziunas, Mindaugas; Wünsche, Hans-Jürgen; Koester, Jan-Philipp; Wenzel, Hans; Bandelow, Uwe; Knigge, AndreaWith rising current the lateral far-field angle of high-power broad-area lasers widens (far-field blooming) which can be partly attributed to non-thermal effects due to carrier induced refractive index and gain changes that become the dominant mechanism under pulsed operation. To analyze the non-thermal contribution to far-field blooming we use a traveling wave based model that properly describes the injection of the current into and the diffusion of the carriers within the active region. Although no pre-assumptions regarding the modal composition of the field is made and filamentation is automatically accounted for, the highly dynamic time-dependent optical field distribution can be very well represented by only few modes of the corresponding stationary waveguide equation obtained by a temporal average of the carrier density and field intensity. The reduction of current spreading and spatial holeburning by selecting proper design parameters can substantially improve the beam quality of the laser.
- ItemEfficient coupling of inhomogeneous current spreading and dynamic electro-optical models for broad-area edge-emitting semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Radziunas, Mindaugas; Zeghuzi, Anissa; Fuhrmann, Jürgen; Koprucki, Thomas; Wünsche, Hans-Jürgen; Wenzel, Hans; Bandelow, UweWe extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edgeemitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone.
- ItemBeam combining scheme for high-power broad-area semiconductor lasers with Lyot-filtered reinjection: Modeling, simulations, and experiments(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Brée, Carsten; Raab, Volker; Montiel-Ponsoda, Joan; Garre-Werner, Guillermo; Staliunas, Kestutis; Bandelow, Uwe; Radziunas, MindaugasA brightness- and power-scalable polarization beam combining scheme for high-power, broadarea semiconductor laser diodes is investigated numerically and experimentally. To achieve the beam combining, we employ Lyot-filtered optical reinjection from an external cavity, which forces lasing of the individual diodes on interleaved frequency combs with overlapping envelopes and enables a high optical coupling efficiency. Unlike conventional spectral beam combining schemes with diffraction gratings, the optical coupling efficiency is insensitive to thermal drifts of laser wavelengths. This scheme can be used for efficient coupling of a large number of laser diodes and paves the way towards using broad-area laser diode arrays for cost-efficient material processing, which requires high-brilliance emission and optical powers in the kW-regime.