(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Zeghuzi, Anissa; Radziunas, Mindaugas; Wenzel, Hans; Wünsche, Hans-Jürgen; Bandelow, Uwe; Knigge, Andrea
The effect of current spreading on the lateral farfield divergence of
highpower broadarea lasers is investigated with a timedependent model using
different descriptions for the injection of carriers into the active region.
Most simulation tools simply assume a spatially constant injection current
density below the contact stripe and a vanishing current density beside.
Within the driftdiffusion approach, however, the injected current density is
obtained from the gradient of the quasiFermi potential of the holes, which
solves a Laplace equation in the pdoped region if recombination is neglected.
We compare an approximate solution of the Laplace equation with the exact
solution and show that for the exact solution the highest farfield divergence
is obtained. We conclude that an advanced modeling of the profiles of the
injection current densities is necessary for a correct description of
farfield blooming in broadarea lasers.
