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    Growth of PdCoO2 films with controlled termination by molecular-beam epitaxy and determination of their electronic structure by angle-resolved photoemission spectroscopy
    (Melville, NY : AIP Publ., 2022) Song, Qi; Sun, Jiaxin; Parzyck, Christopher T.; Miao, Ludi; Xu, Qing; Hensling, Felix V. E.; Barone, Matthew R.; Hu, Cheng; Kim, Jinkwon; Faeth, Brendan D.; Paik, Hanjong; King, Phil D. C.; Shen, Kyle M.; Schlom, Darrell G.
    Utilizing the powerful combination of molecular-beam epitaxy (MBE) and angle-resolved photoemission spectroscopy (ARPES), we produce and study the effect of different terminating layers on the electronic structure of the metallic delafossite PdCoO2. Attempts to introduce unpaired electrons and synthesize new antiferromagnetic metals akin to the isostructural compound PdCrO2 have been made by replacing cobalt with iron in PdCoO2 films grown by MBE. Using ARPES, we observe similar bulk bands in these PdCoO2 films with Pd-, CoO2-, and FeO2-termination. Nevertheless, Pd- and CoO2-terminated films show a reduced intensity of surface states. Additionally, we are able to epitaxially stabilize PdFexCo1-xO2 films that show an anomaly in the derivative of the electrical resistance with respect to temperature at 20 K, but do not display pronounced magnetic order.
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    Epitaxial growth of the first two members of the Ban +1InnO2.5 n +1Ruddlesden-Popper homologous series
    (New York, NY : American Institute of Physics, 2022) Hensling, Felix V. E.; Smeaton, Michelle A.; Show, Veronica; Azizie, Kathy; Barone, Matthew R.; Kourkoutis, Lena F.; Schlom, Darrell G.
    We demonstrate the epitaxial growth of the first two members, and the n = ∞ member of the homologous Ruddlesden-Popper series of Ba n + 1 In n O 2.5 n + 1 of which the n = 1 member was previously unknown. The films were grown by suboxide molecular-beam epitaxy where the indium is provided by a molecular beam of indium-suboxide [In 2O (g)]. To facilitate ex situ characterization of the highly hygroscopic barium indate films, a capping layer of amorphous SiO 2 was deposited prior to air exposure. The structural quality of the films was assessed by x-ray diffraction, reflective high-energy electron diffraction, and scanning transmission electron microscopy.