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High-performance Li-O2 batteries with trilayered Pd/MnOx/Pd nanomembranes

2015, Lu, Xueyi, Deng, Junwen, Si, Wenping, Sun, Xiaolei, Liu, Xianghong, Liu, Bo, Liu, Lifeng, Oswald, Steffen, Baunack, Stefan, Grafe, Hans Joachim, Yan, Chenglin, Schmidt, Oliver G.

Trilayered Pd/MnOx/Pd nanomembranes are fabricated as the cathode catalysts for Li‐O2 batteries. The combination of Pd and MnOx facilitates the transport of electrons, lithium ions, and oxygen‐containing intermediates, thus effectively decomposing the discharge product Li2O2 and significantly lowering the charge overpotential and enhancing the power efficiency. This is promising for future environmentally friendly applications.

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Biomimetic microelectronics for regenerative neuronal cuff implants

2015, Karnaushenko, Daniil, Münzenrieder, Niko, Karnaushenko, Dmitriy D., Koch, Britta, Meyer, Anne K., Baunack, Stefan, Petti, Luisa, Tröster, Gerhard, Makarov, Denys, Schmidt, Oliver G.

Smart biomimetics, a unique class of devices combining the mechanical adaptivity of soft actuators with the imperceptibility of microelectronics, is introduced. Due to their inherent ability to self‐assemble, biomimetic microelectronics can firmly yet gently attach to an inorganic or biological tissue enabling enclosure of, for example, nervous fibers, or guide the growth of neuronal cells during regeneration.

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Direct transfer of magnetic sensor devices to elastomeric supports for stretchable electronics

2015, Melzer, Michael, Karnaushenko, Daniil, Lin, Gungun, Baunack, Stefan, Makarov, Denys, Schmidt, Oliver G.

A novel fabrication method for stretchable magnetoresistive sensors is introduced, which allows the transfer of a complex microsensor systems prepared on common rigid donor substrates to prestretched elastomeric membranes in a single step. This direct transfer printing method boosts the fabrication potential of stretchable magnetoelectronics in terms of miniaturization and level of complexity, and provides strain‐invariant sensors up to 30% tensile deformation.

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Self‐assembled on‐chip‐integrated giant magneto‐impedance sensorics

2015, Karnaushenko, Daniil, Karnaushenko, Dmitriy D., Makarov, Denys, Baunack, Stefan, Schäfer, Rudolf, Schmidt, Oliver G.

A novel method relying on strain engineering to realize arrays of on‐chip‐integrated giant magneto‐impedance (GMI) sensors equipped with pick‐up coils is put forth. The geometrical transformation of an initially planar layout into a tubular 3D architecture stabilizes favorable azimuthal magnetic domain patterns. This work creates a solid foundation for further development of CMOS compatible GMI sensorics for magnetoencephalography.

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Wearable magnetic field sensors for flexible electronics

2014, Melzer, Michael, Mönch, Jens Ingolf, Makarov, Denys, Zabila, Yevhen, Bermúdez, Gilbert Santiago Cañón, Karnaushenko, Daniil, Baunack, Stefan, Bahr, Falk, Yan, Chenglin, Kaltenbrunner, Martin, Schmidt, Oliver G.

Highly flexible bismuth Hall sensors on polymeric foils are fabricated, and the key optimization steps that are required to boost their sensitivity to the bulk value are identified. The sensor can be bent around the wrist or positioned on the finger to realize an interactive pointing device for wearable electronics. Furthermore, this technology is of great interest for the rapidly developing market of ­eMobility, for optimization of eMotors and magnetic bearings.

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High-performance magnetic sensorics for printable and flexible electronics

2014, Karnaushenko, Daniil, Makarov, Denys, Stöber, Max, Karnaushenko, Dmitriy D., Baunack, Stefan, Schmidt, Oliver G.

High‐performance giant magnetoresistive (GMR) sensorics are realized, which are printed at predefined locations on flexible circuitry. Remarkably, the printed magnetosensors remain fully operational over the complete consumer temperature range and reveal a giant magnetoresistance up to 37% and a sensitivity of 0.93 T−1 at 130 mT. With these specifications, printed magnetoelectronics can be controlled using flexible active electronics for the realization of smart packaging and energy‐efficient switches.